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When an MOS transistor is biased with VD>VD (sat.), the effective channel length is reduced by ΔL and the current ID^' is larger than ID (sat.), as shown in Fig.6-32. Assuming that the depleted region ΔL is described by an expression similar to Eq. (6-30) with VD-VD( sat. ) for the voltage across ΔL, show that the conductance beyond saturation is gD^'=(∂ID^')/(∂VD)=ID (sat.) (∂)/(∂VD)((L)/(L-ΔL)) and find the expression for gD^' in terms of VD. | Numerade
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