The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explored.

We report the results of investigation of the thermopower (Seebeck effect) of a ThCr2Si2-structured heavy fermion single-crystalline YbPd2Si2 compound (itterbium-palladium-silicon, 1-2-2) under...

2017年11月1日 · In this paper, X Ray Photoelectron Spectroscopy (XPS) has been used to characterize the SiGe channel layer. XPS is a well-established method for the analysis of ultrathin films thanks to its surface sensitivity (<100 Å) and its …

2020年2月24日 · TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film...

2020年3月1日 · In this study, the compositions of ultrathin oxides (<1.2 nm) formed by oxidizing SiGe surface are characterized using X-ray photoelectron spectroscopy (XPS) technology as a function of ozone oxidation processing conditions. It is found that the oxide composition is very sensitive to ozone partial pressure.

2024年1月1日 · In this study, we compare the robustness of optical constants and optical band gap determination of three different materials: SiGe, N-doped HfO 2 and MoO x, using the combination of two techniques: spectroscopic ellipsometry, and energy loss signal (ELS) of X-ray photoelectron spectroscopy (XPS).

2023年2月23日 · We investigated 1-D and 2-D chemical depth mapping using SIMS, XPS and TEM-EDX. For strain/lattice spacing engineering effects, we used XRD and Raman analysis for Ge, Sn and C implantation into Si and SiGe wafers followed by RTA or laser melt annealing to form surface thin layers of SiGe, SiGeSn and SiGeC.

2014年5月1日 · The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements....

Based on the understanding of oxidation kinetics, we design the gate stack formation process and demonstrate very good C-V characteristics on SiGe with Si-cap free passiva-tion, by direct deposition of a designed dielectric film, fol-lowed by an optimal post-deposition annealing. 1. Background and objective.

In the present work we study the extent to which extrinsic chemical and field effect passivation can improve the overall electrical passivation quality of silicon dioxide on silicon. Here we...