2015年10月21日 · Double-side SiC coating is demonstrated to be an effective way to minimize wafer bow, with a bow value of smaller than 20 μm compared to a value of 76.75 μm for single-side SiC deposition.

In this paper, the parameters influencing the roughness, crystalline quality, and wafer bow are investigated and engineered to obtain high quality, low roughness 3C-SiC/Si templates suitable...

2022年12月1日 · SSD from wafering operations located on the wafer surface can significantly impact the shape (Bow, Warp, and TTV) of SiC wafers and can be considered a thin film under compressive stress on wafer surfaces.

Bow指晶圆在未紧贴状态下，晶圆中心点表面距离参考平面的最小值和最大值之间的偏差，偏差包括凹形和凸形的情况，凹形弯曲度为负值，凸形弯曲度为正值；一般以微米(μm)表示，一般表达形式如：-15～15µm。

2020年5月3日 · 我们在查阅半导体硅片或其它类型材料的衬底、晶片时，常常会看到诸如：ttv、bow、warp，甚至可能看到tir，stir，ltv等这类技术指标，他们表征的是什么参数呢？

2023年6月1日 · The increase of the radius for crystal B further proves that the modifications of the growth process led to a reduced amount of stress during and after the growth. 26 m is still a relatively high amount of bow for a 4H-SiC wafer (for high quality SiC crystal, radii of up to 800 m have been reported in literature [89], typical values of ...

2019年11月18日 · As a semiconductor substrate, the SiC wafer not only needs good surface quality but also requires surface shape accuracy. In the present study, a novel lapping plate was designed for SiC wafers to improve their surface quality and shape accuracy.

In this study, the wafer distortion (bow, the deformation of the median surface of a free and unclamped wafer at the center point) induced by ion implantation has been investigated and the ion implanter which can handle the distorted thin SiC wafer is explained.

2011年2月1日 · Single-side polished silicon carbide wafers could exhibit large bow and warp due to the presence of mechanical damage on the unpolished surface. In this study, we investigated the effect of thermal annealing on the wafer bow.

2021年9月30日 · Grinding wheels manufactured with this technology can accomplish ultra-smooth SiC (Ra = 0.55 nm and TTV < 1 μm) surfaces due to their unique bonding structure and their tailored grit size.