图 1：SiC MOSFET 设计的示意图，显示了典型平面结构和英飞凌和罗姆第 3 代和第 4 代的沟槽设计。 沟槽 MOSFET 包括形成在沟槽边缘的栅极，该栅极已被蚀刻进 SiC器件。沟槽栅极用于设计较低电阻的器件—准确地说是较低的特定导通电阻Ronsp（单位：电阻 x 面积）。

2018年8月26日 · In this paper, we propose a method for detecting defects on SiC substrate by SEM and classifying them using deep learning. Furthermore, we develop a system based on the method and evaluate the performance by applying to …

2013年11月15日 · In recent years, there had been significant advances in scanning electron microscopy (SEM) with the introduction of an in-lens detector combined with field emission electron guns. This allows defects in solids, such as radiation damage created by the implanted ions, to be detected with SEM.

2023年11月24日 · Monno等人提出了一种深度学习系统，该系统通过SEM检查SiC衬底上的缺陷，并以70%的准确率对其进行分类。 该方法可以在不出现线性缺陷不一致的情况下组合多个瓦片，并能对126个缺陷进行检测和分类，具有很好的精度。

2024年6月12日 · microscope (SEM) to generate a three-dimensional image simultaneously depicting the gate and well regions of a SiC MOSFET. This method is combined with traditional nanoprobing EBIC for complete junction characterization in three-dimensions. EXPERIMENTAL Commercially available 4H-SiC MOSFET samples were bonded to 12.5mm aluminum SEM

Compared to traditional Silicon (Si) based semiconductors, SiC has significant advantages – superior power efficiency, ability to operate in higher voltage and thermal environment, smaller in size, less amount of passive components, lower conduction and switching losses, lower cooling needs, and DC fast charging capability.

Scanning electron microscopy (SEM) is another non-optical technique used extensively for defect analysis of SiC wafers. SEM has high spatial resolution on the order of nanometers. A focused electron beam generated by accelerator scans the surface of SiC wafer and interacts with SiC atoms to produce various types of signals such as secondary ...

2024年1月25日 · 在碳化硅（SiC）材料中，缺陷通常分为两大类：晶体缺陷和表面缺陷。这些缺陷对SiC基材料及其制成的半导体器件的性能有着显著的影响。以下是对这些晶体缺陷的简要说明： 1. 点缺陷（Point Defects, PD）：由单个原子位置的缺失或错误占位引起，如空位和杂质 ...

2016年1月1日 · Graphene grown by a sublimation technique was studied by Scanning Electron Microscopy (SEM) and micro-Raman spectroscopy. The measurement area of a sample was marked and investigated using both systems, as a result of which SEM images were directly compared with Raman maps.

使用扫描电子显微镜 (SEM) 观察具有通过化学气相沉积 (CVD) 生长的外延层的 4H-SiC 晶片上的表面缺陷。 本实验使用了从 [0001] 向 [112-0] 方向具有 4 或 8 度偏离表面的市售外延晶片。 在 SEM 图像中识别出 3C-SiC 颗粒、三角形缺陷、彗星、钝角三角形缺陷和微孔。 这篇论文可以被认为是一个 SEM 图像的目录，并描述了具有 CVD 生长外延层的 4H-SiC 晶片的各种表面缺陷。 使用扫描电子显微镜 (SEM) 观察具有通过化学气相沉积 (CVD) 生长的外延层的 4H-SiC 晶片上 …