晶圆是指硅半导体集成电路制作所用的硅晶片，由于其形状为圆形，故称为晶圆；在硅晶片上可加工制作成各种电路元件结构，而成为有特定电性功能的集成电路产品。 ②chip——芯片. 一片载有Nand Flash晶圆的wafer，wafer首先经过切割，然后测试，将完好的、稳定的、足容量的die取下，封装形成日常所见的Nand Flash芯片（chip）。 芯片一般主要含义是作为一种载体使用，并且集成电路经过很多道复杂的设计工序之后所产生的一种结果。 ③die——晶粒. Wafer上的一个小 …

Our SiC die offer unrivaled ruggedness and performance with an oxide lifetime of more than 100 years, a stable body diode and “IGBT-like” short circuit performance.

With industry-leading low specific on-resistance over temperature, Wolfspeed’s broad portfolio of Bare Die MOSFETs enables a system-level customization and efficiency to maximize power density. Wolfspeed offers one of the broadest Silicon Carbide (SiC) power die product portfolios in the industry in terms of die layout and metallurgy for ...

(中文) Wolfspeed offers one of the broadest Silicon Carbide (SiC) power die product portfolios in the industry in terms of die layout and metallurgy for optimized module assembly.

Build power electronics for the most demanding automotive applications using the unrivaled efficiency, frequency, temperature, and voltage capabilities of SiC. Coherent SiC bare die MOSFETs use a proven technology platform (licensed from GE Aviation Systems) to deliver industry-leading FIT rates.

ROHMs Bare Die MOSFETs are used in advanced power electronics circuits to achieve significantly higher levels of energy efficiency than is possible with conventional silicon devices. Please contact us for specifications and purchase information. We do not sell bare die SiC MOSFET products through internet distributors.

Our SiC Schottky Barrier Diodes (SBDs) offer a wide range of solutions. SiC bare die MOSFETs and SBDs are excellent options for advanced power circuits and provide significantly higher power density and efficiency. Our SiC power modules are available in low-profile, low-stray inductance and baseplate-less packaging.

onsemi's Silicon Carbide (SiC) bare dies are optimized for use in high power applications such as EV Traction inverters, DC-DC converters, and off-board chargers.

OptiMOS™ bare dies combine very low on-state resistance (R DS (on)) and fastest switching behavior, providing outstanding performance to a wide range of industrial and consumer applications.

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.