
Silicon carbide color centers - Wikipedia
Silicon carbide color centers are point defects in the crystal lattice of silicon carbide, which are known as color centers. These color centers have multiple uses, some of which are in photonics, semiconductors, and quantum applications like metrology and quantum communication.
Silicon carbide - Wikipedia
Silicon carbide (SiC), also known as carborundum (/ ˌkɑːrbəˈrʌndəm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor, it occurs in nature as the extremely rare mineral moissanite, but has been mass-produced as a powder and crystal since 1893 for use as an abrasive.
为什么碳化硅(SiC)会呈现多种颜色? - 知乎专栏
SiC(碳化硅) 是 Si 硅元素和 C 碳元素以 1:1 比例形成的四面体结构的化合物。 碳化硅呈现多种颜色,主要取决于其晶体类型和掺杂情况。 它的晶体结构有多种排列组合,已发现的 SiC 晶型达 200 多个。 为了区分 SiC 的不同晶型,主要分成两类典型的结构: 一类是 闪锌矿结构 的立方晶系(β-SiC), 用C代表立方(cubic), 如3C-SiC. 具有金刚石晶型,通常颜色较深,可能呈现黑色。 另一类是六角型或菱形结构的大周期结构 六方晶系 (α-SiC) , 用H代表六方(Hexagon), 用R …
Robust single modified divacancy color centers in 4H-SiC under
2024年11月22日 · Color centers in silicon carbide (SiC) offer exciting possibilities for quantum information processing. However, the challenge of ionization during optical manipulation leads to...
Why Does SiC Wafer Show Different Color? - XIAMEN …
2021年3月5日 · Why Does SiC Wafer Show Different Color? Due to the wide band gap of SiC wafer, SiC does not absorb part or almost all of the visible light. The wavelength of the absorbed light depends on the band gap, the energy levels of the main impurities and the excited energy levels in the band.
Silicon carbide color centers for quantum applications
2020年3月6日 · SiC color centers or point defects act as isolated quantum systems for quantum sources and optical and electrical spin control. As the short immediate term goal has been to identify these systems in the material, as the medium-term goal, the same optical and spin interface can be used for electric and magnetic field sensing.
Color properties of some silicon carbide polytypes [6].
In this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H and 6H), using first-principles approaches...
Divacancy and silicon vacancy color centers in 4H-SiC fabricated …
2023年3月1日 · There are mainly two advantages for proton to fabricate color center in SiC. Firstly, proton has a high ionization energy loss rate, is more likely to produce charged vacancy and other point defects. Secondly, the lattice quality around the color center fabricated by the proton implantation can be effectively improved due to the small mass and ...
(PDF) Silicon carbide color centers for quantum applications
2020年3月6日 · SiC color centers or point defects act as isolated quantum systems for quantum sources and optical and electrical spin control. As the short immediate term goal has been to identify these systems...
Femtosecond laser controllable annealing for color centers based …
2024年11月15日 · Typical color centers in SiC include silicon vacancies (V Si), carbon vacancies and divacancies, with V Si color centers being the most extensively studied. The photoluminescence (PL) band (850–950 nm) of V Si corresponds to the near-infrared window. Also, V Si color center has the readability of quantum spin coherent states.