1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET. BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

sic（碳化硅）功率模块. 使用罗姆公司生产sic-dmosfet的半桥构成sic mosfet模块。

SiC（碳化矽）功率模組 BSM600D12P3G001是由羅姆公司生產的SiC-UMOSFET和SiC-SBD構成的全SiC半橋模組。 最適合馬達驅動、逆變器、轉換器、太陽能發電、風力發電及感應加熱裝置等用途。

bsm400c12p3g202是由sic-umosfet和sic-sbd构成的斩波模块。 适合电机驱动、转换器、光发电及风力发电用途。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？

Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible.

Evaluation boards make it easy to evaluate ROHMs broad portfolio of SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules.

2016年4月4日 · In addition to 120 A and 180 A full SiC power modules, ROHM offers a 300 A type (BSM300D12P2E001) that enables support for larger power applications such as high capacity power supplies industrial equipment. Moreover, significantly reduced switching loss (compared with conventional Si IGBT modules) makes high-frequency operation possible ...

金秋10月，我司Apollo PVD (Sputter)设备 (背面金属溅射设备，Wafer BSM Sputter)成功交付国内领先碳化硅 (SiC)晶圆制造厂。 Apollo PVD (Sputter)设备，在SiC/背金应用上的优势： 特有的晶圆托盘设计，可以安全高效处理Thin wafer。 特有的晶圆托盘设计，可同时兼容6寸，8寸，12寸晶圆Sputter需求。 丰富的SiC背面金属溅射工艺经验。 易操作维护、占地面积小的机型。 最高可配置5种金属靶材，满足客户不同工艺应用需求。 Apollo PVD (Sputter)设备以其卓越的技术优势和 …

・Full SiC power module with SiC MOSFET and SiC SBD ・High-speed switching and low switching loss ・Ensured reliability of body diode conduction

SiC Power Module BSM600D12P3G001 Application Circuit diagram Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction