2011年4月1日 · We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 × 10 8 W/cm 2, repetition rate 3 Hz, 10 J/cm 2 laser fluence).

2019年3月17日 · Aluminum nitride (AlN) films were synthesized onto Si (100) substrates by pulsed laser deposition (PLD) in vacuum or nitrogen, at 0.1, 1, 5, or 10 Pa, and substrate temperatures ranging from RT to 800 °C. The laser parameters were set at: incident laser fluence of 3–10 J/cm2 and laser pulse repetition frequency of 3, 10, or 40 Hz, respectively.

2024年7月1日 · Pulse laser deposition (PLD) offers alternative methods in depositing AlN on Si. With more laser pulses, the optical bandgap of AlN approaches bulk AlN (∼6.2 eV), corroborating near band edge emission in PL. The grain size of deposited AlN increases with laser pulses, due to aggregation during condensation on Si substrate.

2019年3月17日 · Aluminum nitride (AlN) films were synthesized onto Si (100) substrates by pulsed laser deposition (PLD) in vacuum or nitrogen, at 0.1, 1, 5, or 10 Pa, and substrate temperatures ranging from RT...

Aluminum nitride films have been deposited on Si~111! substrates at different substrate temperatures using two techniques; pulsed laser deposition or reactive magnetron sputtering.

2001年11月1日 · We have studied the pulsed laser deposition, DC magnetron sputtering and cathodic arc techniques for the conformal growth of AlN films. After optimizing process pressure, we were able to demonstrate film deposition on the vertical walls of etched silicon.

Aluminum nitride (AlN) films were synthesized onto Si (100) substrates by pulsed laser deposition (PLD) in vacuum or nitrogen, at 0.1, 1, 5, or 10 Pa, and substrate temperatures ranging from RT to 800 °C. The laser parameters were set at: incident laser fluence of 3–10 J/cm2 and laser pulse repetition frequency of 3, 10, or 40 Hz, respectively.

2019年3月17日 · Aluminum nitride (AlN) films were synthesized onto Si (100) substrates by pulsed laser deposition (PLD) in vacuum or nitrogen, at 0.1, 1, 5, or 10 Pa, and substrate temperatures ranging from RT to 800 °C. The laser parameters were set at: incident laser fluence of 3–10 J/cm2 and laser pulse repetition frequency of 3, 10, or 40 Hz, respectively.

2017年11月9日 · Aluminium nitride (AlN) films were synthesized by pulsed laser ablation of poly-AlN target on Si (100) substrates using a KrF* excimer laser source (λ = 248 nm, τFWHM ≤ 25 ns), with incidence laser fluence of ~ 3 J/cm 2 and laser pulse repetition frequencies (LPF) of 3, 10 and 40 Hz, respectively.

Aluminum nitride films have been deposited on Si (111) substrates at different substrate temperatures using two techniques; pulsed laser deposition or reactive magnetron sputtering.