2024年2月6日 · Thermal atomic layer deposition (TH-ALD) emerges as a promising technique due to its capabilities in achieving controlled composition and large-area deposition. Here, we report a method for the vertical dimension control of ultrahigh performance indium-gallium-zinc-oxide (IGZO) TFTs fabricated via TH-ALD.

2021年4月1日 · Atomic-layer deposition (ALD) enables the facile fabrication of indium–gallium zinc oxide (IGZO) thin-film transistors (TFTs) on a substrate with a nonplanar surface due to its excellent step coverage and accurate thickness control. Here, we report all-ALD-derived TFTs using IGZO and HfO 2 as the

In this study, we propose an approach for obtaining ALD-derived a-IGZO TFTs that demonstrate both bias stability and H incorporation, in addition to high mobility. An ALD-Al 2O 3 GI is implemented in a top gate-bottom contact (TG-BC) struc-ture to obtain self-passivation properties for the a-IGZO layer. Here, the ALD-Al 2O

2023年6月23日 · Achieving high mobility and reliability in atomic layer deposition (ALD)-based IGZO thin-film transistors (TFTs) with an amorphous phase is vital for practical applications in relevant fields.

We successfully fabricated TG-BC ALD-IGZO TFTs that demonstrated bias stability, H incorporation, and extremely high mobility through hybrid GI deposition via in situ PE-ALD and T-ALD processes. To precisely modulate H, C, and O species within the Al 2 O 3 layer, we designed a hybrid Al 2 O 3 GI structure by adopting in situ PE-ALD and T-ALD ...

2023年2月3日 · Atomic layer deposition (ALD) is an advanced technique which can provide conformal, thickness-controlled, and high-quality thin film deposition. Accordingly, studies on ALD based oxide semiconductors have dramatically increased recently.

2019年2月27日 · The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (V O), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to …

Abstract: This study shows the effects of an ultrathin Al2O3-doped ZnO (AZO) interlayer inserted between the channel layer and source/drain (S/D) electrodes on the electrical contact properties of amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs). In particular, Al2O3-doping ratio-dependent variations in electrical contacts were ...

ALD技术是一种利用表面控制气相前体沉积超薄、均匀、无针孔致密层的方法，一直被当作 等离子体增强化学气相沉积 （PECVD，常用于沉积TFT中的大多数膜层）方法的替代。 不过，虽然该技术广泛用于半导体领域，但在显示器制作方面一直被认为不具有所需的速度。 实际上，能够应用到显示器领域的一个关键前提就是：大世代线能够实现大约一分钟的节拍（工艺时间）。 这在以往几乎不可能，不过现在随着上面提到的新技术——空间原子层沉积（Spatial Atomic Layer …

基于这一点的考量，原子层沉积（ALD）是一类可以将厚度控制在sub-nm级的工艺，利用ALD制备OS的方法受到了很大的关注。 氧化物半导体中研究较多的几种材料主要是ZnO、In2O3、IGZO、ITO和IWO等，ZnO由于结晶性强易于形成多晶，晶体管稳定性较差。