2017年1月25日 · X‐ray diffraction measurements exhibit that growth under high TMBi flow leads to a compositional inhomogeneity, as well as the presence of liquid can affect the Bi incorporation. This fact may be responsible of the XRD pendellösung fringes vanishing, and it was clearly seen when growing GaAsBi under optimized conditions [ 1 , 2 ].

Selenium sulfide (SeS2) passivated GaAs is bonded with silicon substrate at 350°C. X-ray diffraction (XRD) analysis shows the formation of Ga–Se phase in the passivation process. From the...

We demonstrate how the formation of octahedral microcrystals of arsenic oxide As 2 O 3 in the form of arsenolite with a size of 200 nm to 10 μm can be initiated by the electrochemical etching...

2016年9月7日 · The XRD FWHM range of GaAs films on Ge/Si is 180–276 arcsec [19 – 21]. Thick Ge buffer layer can obtain high quality GaAs cells, but it reduces the optical loss of bottom Si cells seriously. In this study, we investigate high quality GaAs epilayers grown on Si substrate using 100 nm Ge buffer layer. The XRD FWHM of GaAs is 220 arcsec.

2009年6月16日 · We present a high-resolution X-ray diffraction pattern of periodic GaAs nanorod (NR) ensembles and individual GaAs NRs grown catalyst-free throughout a prepatterned amorphous SiN x mask onto GaAs[111]B surfaces. The experiments were performed at a home laboratory using synchrotron radiation in combination with a micron-sized beam prepared by ...

X-ray diffraction (XRD) using synchrotron radiation (SR) is a powerful probe of thin-film crystalline materials. Several groups have combined SR-XRD with in situ molec-

Abstract Using methods of the X-ray diffraction and Raman backscattering were studied properties of AlGaAs/GaAs (100) MOCVD heterostructures which have been grown up at low temperature (LT). It is established, that dependence on submit to classical Vegard’s law, and values of parameters are less than at GaAs.

Gallium arsenide (GaAs) nanoparticles' optical and emission properties can be tuned by changing their size across the visible spectrum. GaAs nanoparticles' optical characteristics are degraded...

2019年3月24日 · A very recent analysis 9 has cometo the conclusion that models similar to the ␨ (4ϫ2) modelcan interpret the x-ray diffraction data for the cation-rich͑001͒ surfaces of GaAs, InAs, and InSb.

2020年1月7日 · Two types of QD structures with the different compositions of capping layers: (Al0.30Ga0.70As (#1) and Al0.10Ga0.75In0.15As (#2)), are studied using the photoluminescence (PL), X-ray diffraction (XRD) and high-resolution XRD (HR-XRD) techniques.