A ferroelectric fin diode for robust non-volatile memory
2024年1月13日 · The simple structure of metal/ferroelectric/metal in FTJ allows a high memory density, but the few-nanometers-thick ferroelectric films for direct tunneling suffer from poor …
铁电存储器的前景一片光明 - 知乎 - 知乎专栏
最简单的铁电存储器设计，FeRAM，将金属/铁电/金属电容器集成到 BEOL 工艺中，在每个单元下方放置一个传统的 MOSFET。 为了存储数据，电场在 P- 和 P+ 极化状态之间切换电容器。 …
Breakdown Lifetime Analysis of HfO2-based Ferroelectric ... - IEEE …
2020年4月28日 · We clarified breakdown mechanisms of HfO 2-based ferroelectric tunnel junction (FTJ) memory via systematic time-dependent dielectric breakdown (TDDB) measurement for …
浅谈铁电存储器：如何实现下一代内存计算？-电子工程专辑
2022年2月23日 · 目前大多数报导的FTJ 存储器其操作电压可在4V 以下，操作速度介于10-100 ns 之间，具备低写入功耗与非破坏性读取等优点，明显优于传统的Flash。 另外，FTJ 存储器 …
Ferroelectric HfO2 Tunnel Junction Memory With High TER
2018年12月11日 · We have investigated device design of HfO 2-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom …
The Case for Ferroelectrics in Future Memory Devices
Based on the readout procedure, three different ferroelectric memory concepts can be discriminated: FeRAM, FeFET and FTJ. In this paper, the applicability of the three different …
实现下一代“存内计算”的关键：铁电记忆体的挑战与未来机会
2022年3月9日 · Near-Memory Computing是透过先进封装技术以晶片层级整合（die-level integration）将运算晶片与记忆体晶片整合在一起，或将运算电路与记忆体电路以积层 …
3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for …
2024年11月19日 · Here, based on zirconium-doped hafnium oxide (Hf 0.5 Zr 0.5 O 2, HZO) ferroelectric thin films, we prepare a 3D stacked ferroelectric memory array for vertically …
Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity
2023年6月20日 · FTJ devices, with a thin ferroelectric potential barrier sandwiched between two electrodes, have been extensively investigated for non-volatile memory devices due to their …
(PDF) Ferroelectric HfO 2 Tunnel Junction Memory With
2018年12月11日 · We have investigated device design of HfO2-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom electrodes is the …