The influence of scaling and airgap DTI under the three stress conditions (reverse emitter-base current stress, very high forward current stress and mixed-mode stress) on the reliability performance is reported.

The modern SiGe HBT structure with shallow and deep trench isolation (STI and DTI) is analyzed from electrothermal standpoint using TCAD system. The electrical parameters β, f T, f max, maximal temperature T max, and thermal resistance R TH are under consideration.

2019年9月11日 · This paper presents an investigation into the impact of neutron-induced displacement damage on the single event transient (SET) charge collection in silicon–germanium heterojunction bipolar transistors (SiGe HBT) based on pulsed laser micro-beam experiment and technology computer aided design (TCAD) simulation.

This paper presents a Verilog-A compact model adaptation for a High Voltage SiGe HBT in a DTI on SOI process incorporating characteristic changes observed from a Field Effect Electrode. The output characteristics of the Bipolar are controlled, or “tuned”, by what is …

2023年2月17日 · The results show that the sensitive area of single event effects in the SiGe HBT with a deep trench isolation (DTI) structure is the DTI region. The DTI structure can not only prevent the external excess carriers from diffusing to the inner collection node but also limit the excess carriers from diffusing to the outside, resulting in a ...

SiGe HBT 通常使用深沟槽隔离 (DTI) 设计，以最大限度地减少从子集电极到基板的寄生电容（更快的速度），并允许将器件制造得更紧密。 另一个好处是 DTI 不会让来自外部撞击的载流子扩散到结中并感应电流。

2019年4月1日 · In this work, the impact of substrate contact structure on the ion-induced current transient in SiGe HBT fabricated without DTI is investigated by simulation. Firstly, the three-dimensional model of the SiGe HBT is built using TCAD tools.

我们研究了脉冲激光在具有硅局部氧化 (LOCOS) 和深沟槽隔离 (DTI) 结构的不同硅锗 (SiGe) 异质结双极晶体管 (HBT) 中引起的单事件瞬态 (SET)。 详细讨论了实验结果，并证明具有 LOCOS 结构的 SiGe HBT 比 SET 中的 DTI SiGe HBT 更敏感。

2006年11月28日 · We have studied the impact of lateral device scaling on the reliability performance of the quasi self-aligned SiGe:C HBTs integrated in a 0.13 µm BiCMOS process with innovative airgap deep trench isolation. The lateral scaling reduces the parasitics of the devices and improves the device performance.

在本文中，我们研究了两种基于计算机辅助设计技术的在非深沟槽隔离 (DTI) 国产硅锗异质结双极晶体管 (SiGe HBT) 中使用背结和 p+ 缓冲层来缓解单事件效应 (SEE) 的技术。