2014年8月29日 · In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that...

2011年12月1日 · Cu layers 54–853 nm thick were deposited by DC magnetron sputtering at room temperature from a Cu target with a sputtering power of 2.07 W × cm−2 in an argon atmosphere at a pressure of 8 ×...

2023年7月1日 · In this paper, Cu film was prepared by DC magnetron sputtering and the effect of different sputtering process parameters on the uniformity of Cu film deposited in micro-via was investigated in detail.

2019年2月1日 · Owing to its high ionization degree, high power pulsed magnetron sputtering (HPPMS) has proven advantageous for Cu film growth. In this study, Cu films with different thicknesses deposited by HPPMS at different peak powers were prepared.

2023年6月15日 · Sputtered Cu/Si thin films were experimentally prepared at different sputtering pressures and characterized using X-ray diffraction (XRD) and an atomic force microscope (AFM). Simultaneously, an application-oriented simulation approach for magnetron sputtering deposition was proposed in this work.

2021年12月10日 · Herein, we fabricate the SMSI between sputtering reconstructed Cu and flame-made LaTiO 2 support at a mild reduction temperature, exhibiting an ultra-stable performance for more than 500 h at...

2017年5月10日 · We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si (001) wafers covered with native oxide without any prior chemical etching...

We have developed pre-treatment, Cu sputtering, and CVD-Co technologies for semiconductor Cu interconnect technology. A new remote plasma process in the pre-treatment technology suppressed damage to low-k films, and uniformity in the wafer surface and stability of continuous treatment were obtained.

2017年6月1日 · In this study, we investigated the influence of the pulsing frequency and the ion-to-atom ratio at direct-current (DC) and high power impulse magnetron sputtering on the structural, optical and electrical properties of Cu films of thickness less than 25 nm.

2022年8月20日 · Sputtering yield of Cu bombarded by Ar ions as function of low ion energies. The black line and the blue line give sputtering yield according to the Sigmund theory and the Falcone correction, respectively. The points represent measured results …