2018年12月11日 · Atomic layer deposition (ALD) of TiO 2 was performed in tandem with in situ surface-enhanced Raman spectroscopy (SERS) to monitor changes in the transient surface species across multiple ALD cycles. A self-assembled monolayer of 3-mercaptopropionic acid was used as a capture agent to ensure that nucleation of the titanium precursor (titanium ...

2021年6月1日 · Atomic layer deposition (ALD) has emerged as a promising technique to synthesize robust thin films. The self-limiting mechanism, a unique feature of ALD, enables precise thickness control at the atomic level and conformal …

2023年1月15日 · Titanium dioxide (TiO 2) thin films are produced by atomic layer deposition (ALD) since the beginning of the 90′s [1]. TiO 2 films can have an amorphous or crystalline structure with anatase or rutile phases, both tetragonal.

2013年9月2日 · Atomic layer deposition (ALD) of thin films from TiCl 4 and O 3 on Si(100) substrates was investigated. The growth of TiO 2 was obtained at substrate temperatures of 225–600 °C from these hydrogen-free precursors. Formation of anatase phase in the films was observed at 250–600 °C.

2025年1月7日 · This study investigates the presence of titanium oxynitride bonds in titanium dioxide (TiO 2) thin films grown by atomic layer deposition (ALD) using tetrakis dimethyl amino titanium (TDMAT) and water at temperatures between 150 and 350 °C and its effect on the films’ optical and electrical properties. Compositional analysis using X-ray ...

TiO2 极化率 （αopt） 随材料密度的变化是由 n 值确定的，显示极化率随材料密度的变化很大，与其他研究一致并互补。 对低频介电性能的研究表明，TiO2 中的损耗和松弛随着沉积温度的升高而降低，在 300 °C 时达到一个与频率无关的高介电常数，接近多晶锐钛矿 ...

2016年6月24日 · The best-performance devices based on optimized TiO 2 compact film (by 2000 cycles ALD) can achieve power conversion efficiencies (PCEs) of as high as 7.82%. Furthermore, they can maintain over 96% of their initial PCE after 651 h (about 1 month) storage in ambient air, thus exhibiting excellent long-term stability.

2017年5月17日 · 从沉积温度、等离子体的增强作用、沉积载体、掺杂及应用等方面综述了 ALD法制备纳米 TiO 2 薄膜的相关研究进展。

2018年6月14日 · Atomic layer deposition (ALD) was used to modify two different types of carbon black-based Pt oxygen reduction catalysts with protective TiO2 nanostructures to increase catalyst durability. Rates of ALD growth and the structure of deposited TiO2 were observed to be highly dependent on oxygen content of the catalyst substrate.

In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films.