
PVD- Treated ALD TaN for Cu Interconnect Extension to 5nm Node …
We report a novel approach to enable thin (≤15Å) ALD-based TaN barriers. The use of a post-ALD treatment in a PVD chamber resulted in ALD films with resistivity, density and Ta/N ratio …
TaN原子层沉积及其对铜表面氧化的影响 - 借一步网
本文将深入探讨tan的ald工艺,特别关注其对铜表面氧化的潜在影响,以及如何优化工艺参数以确保高质量薄膜的制备。 氮化钽(TaN)的重要性 氮化钽是一种具有独特性质的材料,在微电 …
The via resistance analysis at ALD-to-PVD TaN transition layer
We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also …
将铜互连扩展到2nm的研究_ald tan process summary-CSDN博客
2023年11月14日 · 实现这一目标的一种方法是选择性沉积自组装单层 (SAM)薄膜,通过原子层沉积来沉积TaN (ALD)沿侧壁,去除 SAM并填充铜。 在TaN阻挡层ALD之后,蒸发SAM,然后在 …
TaN薄膜的等离子体增强原子层沉积及其抗Cu扩散性能
与pvd和cvd技术相比,原子层沉积(ald)技术可实现原子层级别的超薄薄膜生长,而且生长模式具有自限制的特性、精确控制薄膜的厚度 [11,12,13] 、生长温度较低且生成的薄膜具有良好的均匀 …
The effective Work-Function of atomic layer deposited TaN thin …
2022年3月30日 · We investigated the effect of capping metals and post annealing on the effective work function (EWF) of atomic layer deposited (ALD) tantalum nitride (TaN) using a metal …
Atomic layer deposition of TaN and Ta - ScienceDirect
2011年9月15日 · Thermal ALD of conductive TaN and insulating Ta 3 N 5 has been demonstrated using PDMAT with either ammonia or MMH respectively. Both processes exhibit good self …
Characteristics of ALD-TaN thin films using a novel precursors for ...
Abstract: ALD-TaN thin films derived from tert-buthyIimidotrisdiethyl-amidotantalum (TBTDET) and tert-amylimidotrisdim-ethylamidotantalum (TAIMATA) precursors for the diffusion barrier in …
XPS studies of the ALD-growth of TaN diffusion barriers: Impact …
2008年10月1日 · In this study, we investigate the first steps of ALD TaN growth with respect to dielectric surface chemistry, using XPS measurements. Three different dielectrics have been …
ALD TaN barrier for enhanced performance with low contact …
We report on an alternative atomic layer deposited (ALD) TaN barrier process for Cu interconnects for 14nm technology node and beyond. ALD films provide ultrathin, conformal …