扫描电镜（SEM）技术可以用来测量结深与薄膜厚度，结深由相片和扫描电镜比例因子决定。 30.量测时的spec有什么作用？ Spec作用在于所做工艺过程通过结果量测判断是否在可接受范围内，对后续步骤没有太大影响或者无影响。 31.ADI指什么？ AEI指什么？ 32.OVL是什么？ OVL measurement指什么？ 33.CD指什么？ 又有什么作用？ 34.ETCH有哪些分类及各有什么特点？ 1. Dry etching (gas process) –by plasma; anisotropic (各向异性) etching. 2.

2018年10月26日 · AEI overlay metrology is often done with a CD-SEM in order to measure in-cell, on-device, and at design rule. Typically, AEI metrology for bias compensation is done on a lower frequency, such as every few weeks.

In this paper, a real-time accurate AEI overlay prediction method will be introduced. It is based on the latest generation 5D Analyzer Workflow, a highly customizable and programmable platform, which provides a graphical and intuitive interface for IC manufacturers to design real-time workflows to control overlay.

2023年10月30日 · 一般在曝光、显影之后对晶圆进行adi(显影后检查)ovl量测，某些特殊刻蚀工艺会对晶圆的aei(刻蚀后检查)ovl影响较大，实际生产中也可以经过aei ovl补偿反馈，改善adi ovl与aei ovl之间的偏差(adi ovl减aei ovl)。

2016年3月8日 · We have showed the wafer level OVL AEI-ADI shift (AEI: After Etch Inspection; ADI: After Developing Inspection; AEI-ADI: AEI minus ADI). Within the shot level map, there exists a...

2014年10月6日 · The optical OVL of the ADI and AEI can be measured in most cases. The AEI shift as measured by CD-SEM requires measuring both elements (target and device) at the same layer, without the need to penetrate any layer, and can be done relatively easily in HVM.

2022年6月11日 · 本文介绍了半导体制造中的线上量测技术，包括CDSEM、HV CDSEM、Ellipsometry和OCD（SCD）。 CDSEM用于量测特征尺寸和表面形貌，HV CDSEM适用于深孔和槽的量测，Ellipsometry侧重薄膜厚度，OCD则用于多维度的薄膜特性分析。 此外，还讨论了套刻精度（OVL）的重要性及其在保证工艺窗口中的作用。 这些技术在确保芯片质量和工艺控制中起到 …

The OVL focus subtraction map can well match the OVL AEI-ADI offset map. Investigation into this interesting correlation finally leads to the conclusion of PR tilting. The method of OVL focus subtraction can therefore be a powerful and convenient tool to represent the OVL mark profile.

本申请提供一种验证利用AEI OVL补偿套刻精度是否有效的方法,包括:若显影后套刻标记图形和刻蚀后套刻标记图形存在所述补偿偏差,则套刻偏差;获取特征图形偏差;根据套刻偏差和特征图形偏差,进行点对点建模以得到拟合曲线,并获取拟合曲线的K值和相关系数R2;根据相关系数R2以及K值,判断利用AEI OVL来补偿套刻精度的方式是否有效.本申请通过套刻偏差和特征图形偏差建模得到拟合曲线,并通过拟合曲线的相关系数R2和K值,判断利用AEI OVL来补偿套刻精度的方式是否有效,确 …

2016年3月8日 · In this paper, we present a study on the overlay (OVL) shift issue in contact (CT) layer aligned to poly-silicon (short as poly) layer (prior layer) in an advanced technology node [1, 2]. We have showed the wafer level OVL AEI-ADI shift (AEI: After Etch Inspection; ADI: After Developing Inspection; AEI-ADI: AEI minus ADI).