We demonstrate an ultra-wideband 32-GS/s SiGe track-and-hold amplifier with 58-GHz bandwidth and a compact footprint due to the inductorless design. The circuit achieves a third harmonic distortion of -64 dBc to -29 dBc at 1.0-Vpp differential input voltage swing thanks to a linearized switched preamplifier and switched emitter follower stage.

Realized in a SiGe-BiCMOS process, and operating at 1.5 V supply voltage, the doubler achieves state-of-the-art conversion gain (6 dB), Psat (5.7 dBm) and efficiency (17%). The operation bandwidth, of more than one octave (14–32 GHz), demonstrates a remarkable improvement against previous works.

2012年2月1日 · GLOBALFOUNDRIES 32 nm high-k metal gate technology, with SiGe channel for V T control of P-field effect transistor, is taken into production. This epitaxial channel material is being introduced into high volume manufacturing in …

This letter presents the design and characterization results of a multi-octave power amplifier (MOPA) fabricated in a 0.13-μm SiGe-BiCMOS technology. The single-stage power amplifier is implemented as the stack of a cascode amplifier combining broadband input matching network with resistive feedback, and a common-base amplifier with base ...

In this paper, we design and fabricate a 32-GS/s 6-bit digital-to-analog convertor (DAC) based on SiGe technology. The DAC uses double sampling technique and segment current steering architecture to achieve high dynamic linearity. A corrector circuit is proposed to suppress the duty cycle error for linearity optimization.

2007年11月1日 · In this paper, we propose two-step recessed SiGe-S/D structure to realize 32 nm node HP pMOSFET. The new structure and the optimization method are presented focusing on 20 nm gate length pMOSFETs.

A Single-Chip 125-MHz to 32-GHz Signal Source in 0.18- um SiGe Bi-CMOS 宽带信号源，主要利用core fractional-N PLL 和 post synthesis frequency division/multiplication.

2025年1月8日 · 在SiGe 材料中随着 Ge成分的增加，其禁带宽度从硅的1.17电子伏递减到锗的0.67电子伏，能带宽度的变化降低了材料的电阻率。 用SiGe 材料制成的晶体管在射频领域（f T>50 GHz)显示了极强的竞争优势。 用SiGe 材料制成的晶体管和RF电路有极低的噪声。

In this paper, we design and fabricate a 32-GS/s 6-bit digital-to-analog convertor (DAC) based on SiGe technology. The DAC uses double sampling technique and segment current steering architecture to achieve high dynamic linearity. A corrector circuit is proposed to suppress the duty cycle error for linearity optimization.

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