考虑到当双口sram同时对同一个地址进行读写时，会产生冲突. 解决办法（采用读出的数据是刚刚将要往里写的数据的方式）： 定义一个flag，由wr_en && rd_en && (wr_addr == rd_addr)构成. 1.当flag为高电平时，将写数据打一拍记为wr_data_1d. 2.将flag打一拍作为输出选择信号flag_1d

2020年7月9日 · 反相器Ⅰ、Ⅱ和存取电路组成了一个 SRAM 单元（SRAM Cell）（由于该单元只能存储一位的数据，有时也叫做 bit-cell）。 根据存取电路的不同，目前大 致可以将 SRAM 单元分为上述三种端口的类型，下面分别介绍这些单元的结构。

High-density and low-leakage 1W1R 2-port (2P) SRAM is realized by 6T 1-port SRAM bitcell with double pumping internal clock in 16 nm FinFET technology. Proposed clock generator with address latch circuit enables robust timing design without sever setup/hold margin.

1W1R, 2WR type of memory cell can also operate as a 1W1R, but the 1W1R type of memory cell cannot operate as a 2WR cell. In this view the 2WR cell has more access-flexibility than 1W1R...

In this paper, we first present a 6T-SRAM (1WR) and two types of 8T-SRAM cell(2WR 1W1R). After that how the (1W1R) cell work with external unit is explained, and we compare the SNM sensitivity and the write/read operations time of 1WR 1W1R cell.

We demonstrate a 1-read/1-write two-port (2P) embedded static random access memory macro based on 8T SRAM bitcell with an effective scheme for design of testability. To achieve a smaller macro area, a differential sense amplifier is introduced to read out the data, where the reference voltage for reading 0/1 data is generated by an unselected ...

2014年1月22日 · Abstract: This brief proposes one-write-one-read (1W1R) and two-write-two-read (2W2R) multiport (MP) SRAMs for register file applications in nanoscale CMOS technology. The cell features a cross-point Write word-line structure to mitigate Write Half-Select disturb and improve the static noise margin (SNM).

2007年4月1日 · In order to address this issue, a new cell design technique for the 1R/1W SRAM cell with 8Tr's has been proposed and demonstrated in a 65 nm CMOS technology.

2022年1月22日 · 在使用底层RAM IP的时候，以1R1W的ram为例，我们需要考虑 某个地址同时发生读写操作的时候（俗称读写冲突），RAM IP输出的data_out是什么值，不同的厂家IP会不一样，同一个厂家的不同ram也有可能不一样。 例如：发生读写冲突时，有些ram会输出老值，有些ram会输出新值，有些ram输出不确定的值. 从严谨的设计角度看，应该从方案设计角度避免此问题。 在 verilog 实现中，ram就不允许发生同时读写同一个地址的情况，采用外部逻辑进行读写 …

2024年8月4日 · 设计中需要简单双端口（有时也称伪双端口，1R1W），但在T12nm工艺下生成SRAM，发现MC里面的双端口选择只有Dual Port SRAM和2 port PRF；选用Dual port SRAM面积代价太大 ...