2020年12月15日 · This paper offers a reliable 10T SRAM topology capable of executing read/write operations with less power dissipation over certain range of frequencies. The results …

2022年1月12日 · Abstract: This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses …

This article proposes a high-speed and low-power 10T compute-static random-access memory (CSRAM) capable of conducting rowwise search operations and executing in-memory logic …

2016年9月19日 · Objective: In this paper, a 10-T (Transistor) static random access memory (SRAM) cell with reduced power and with improved static noise margin (SNM) is proposed. …

This workshop presents a basic overview of different SRAM Cell Designs using LTSpice and ASU's Arizona State Predictive PDK (ASAP) 14nm FinFET node, using an intuitive approach …

2020年12月15日 · The impact of variability of process, temperature and voltage, on different performance parameters turns out to be most relevant issues in the nanometre SRAM design. …

2023年10月19日 · This paper introduces an SRAM cell with ten carbon nanotube field effect transistors (CNTFETs) named 10 T CNTFET SRAM cell to help with that and to address the …

Thispaper examines and analyses a 10T SRAM (static randomaccess memory) cell, as well as comparing it to a normal 6T SRAM.

In this project analyzed 10T cell topologies of SRAM. All the cells have been designed and implemented using Cadence software (crack version). Their respective delays and power …

2022年5月27日 · This paper investigates a novel highly stable and robust single-ended 10T SRAM cell appropriate for low-power portable applications. The cell core of the proposed …