1995年4月26日 · In this work, we present a detailed XPS study of several vanadium oxides in an attempt to identify clearly the different oxidation states present on the surface of these oxides.

2004年4月1日 · The V2p and O1s XPS spectra of the vanadium oxides V 2 O 5, VO 2 and V 2 O 3 were measured to determine the V2p XPS fit parameters, (binding energy (BE) and % Lorentzian–Gaussian) for the vanadium oxidation states V 5+, V 4+ and V 3+.

X-ray photoelectron spectroscopy (XPS or ESCA) curve fitting procedures, reference materials and useful notes are listed here to provide a starting point for the consistent interpretation of XPS spectra.

2021年11月5日 · X-ray photoelectron spectroscopy (XPS) was performed with a Thermo Scientific Escalab Xisystem using Al Kα radiation, and the XPS data was calibrated to the C1s binding energy of 285.0 eV.

2017年5月1日 · Comprehensive study of the oxidation of VO2 thin films from R.T. up to 550 °C. Phase changes and mixed-valence vanadium oxides formed during the oxidation process. Reported Raman and XPS signatures for each vanadium oxide. Monitoring of the current and resistance evolution at the surface of the films.

In this work, vanadium oxide thin films were deposited at oxygen ratios varying from 0 to 5% by pulsed DC reactive sputtering from a vanadium metal target, followed by post-annealing at 500 °C for...

We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness.

The XPS Spectra section provides raw and processed survey spectra, chemical state spectra, BE values, FWHM values, and overlays of key spectra. Atom% values from surveys are based on sample, as received, and Scofield cross-sections.

2017年8月24日 · Epitaxial Grown VO2 with Suppressed Hysteresis and Low Room Temperature Resistivity for High-Performance Thermal Sensor Applications. ACS Applied Nano Materials 2023, 6 (4) , 2917-2927. https://doi.org/10.1021/acsanm.2c05297

Narrow hysteresis phase transition devices based on multilayer VO2, WO3, Mo0.2W0.8O3, and/or MoO3 oxide thin films deposited through a high vacuum sputtering are investigated.