2019年1月25日 · Complete filling of deep trenches or vias, without leaving a void or seam inside, is a key process step in the fabrication of advanced microelectronic and photonic devices. 1–5 …

如上图，STI（Shallow Trench Isolation）浅沟槽隔离，先在硅片上刻蚀浅沟槽，然后填充氧化硅，形成电气隔离层。 主要作用是将CMOS的 nMOSFET 和 pMOSFET 隔离开，防止相互干扰。

CVD by surface reaction kinetics is advan- tageous for deposition in high aspect ratio cases, but it has problems such as low deposi- tion rate, poor reproducibility, poor polycrystalline texture …

This work presents a novel process to fill shallow trench isolation (STI) in 16/14 nm FinFET structure using sub-atmospheric chemical vapor deposition (SACVD) technique. The effect of …

In this study, a novel Flowable CVD process using non-carbon silicon based precursor has been developed for gap filling in 450mm wafer level, sub-20nm STI structure. To achieve 450mm …

We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of …

2014年11月21日 · We present theoretical results for a generalized superconformal CVD process, and then for the specific case of MgO growth using Mg (DMADB) 2 precursor with H 2 O as …

In this work, we report the application of flowable chemical vapor deposition (FCVD) technology in sub-20nm devices and flash devices. FCVD displays a strong ability in filling the gap of not …

We have investigated the characteristics of cell leakage and data retention time when using flowable oxide chemical vapor deposition (CVD) as a shallow trench isolation (STI) process of …

2015年11月20日 · By increasing the flow rates of source gases at 38 kPa, the filling rate was increased to ∼1.3 µm/h for the narrow trench (∼1.5 µm wide and ∼4.7 µm deep) without the …