2025年2月12日 · The interfacial characteristics of the barrier of titanium tungsten alloy (TiW) during damp heat aging (85 ºC, 85%rh for 1000 h) was investigated. The barrier stability of the TiW layer was evaluated in two-layer structures: TiW/ indium tin …

TiW，也就是钛钨合金，是一种在半导体工艺中广泛应用的 镀膜材料。 它是由钛（Ti）和钨（W）按照特定的比例混合而成的合金。 常见的比例有10/90、30/70。 根据合金中钛和钨的比例不同，可能会有不同的性质。 以下是一些一般性的性质： 物理性质： 密度：TiW的密度在10-19 g/cm³范围内，具体值取决于钛和钨的比例。 熔点：TiW的熔点通常在3000°C以上，取决于合金的具体成分。 热导率：一般在15-50 W/m·K范围内。 硬度：一般来说，随着钨的含量增 …

2019年12月1日 · SEM images showing surface morphology of (a) compressive TiW-C2 film (b) tensile TiW-T2 film. Insets show high resolution images with visible difference in surface roughness. (c & d) depict cross section of TiW films with compressive (TiW-C2) and tensile stress (TiW-T2) respectively.

2002年8月6日 · Scanning electron microscopy (SEM) indicates that coverage defined as the ratio of TiW approximately 1000 AA thick on top of oxide to that in the bottom of the windows, varies between approximately 25-35%.

2023年5月22日 · An increase in grain size is observed on annealed TiW contact films compared to as-deposited films as investigated from SEM and AFM analysis. Annealing TiW contact films at 600 °C improves their ohmic properties, reducing surface roughness and resulting in a specific contact resistance of 6.25 × 10 −2 Ω cm 2 at room temperature.

2024年7月8日 · TiW是一种复合难熔金属，其成分为Ti 10 wt%和W 90 wt%，可以作为成功Au/Si共晶键合的替代材料。 TiW不仅是良好的粘附层，而且还是防止金属之间相互扩散的扩散阻挡层[7]。

2024年3月1日 · Microstructural studies were carried out by scanning electron microscopy (SEM) imaging on the seal ring cross-section. The imaging was conducted on the as-bonded chips, and the chips that have been annealed/thermally aged at 150 °C for 6 h and 168 h.

Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiOx)-based resistive switching (RS) memory using TiW/SiOx/TiW device...

2014年11月25日 · In this study, the influence of thickness on adhesion properties of titanium-tungsten (TiW) thin films on silicon substrate has been investigated. The adhesion energy release rate of the coatings in the range of 300 to 1300 nm in thickness has been evaluated via nanoindentation-induced blister technique.

Our work consists in depositing a titanium-tungsten (TiW) thin film on AISI 420 stainless steel (SS) of different thicknesses by DC magnetron sputtering technique. Microstructural (XRD, SEM,...