聊聊常见的薄膜材料-TiW - 知乎 - 知乎专栏
TiW，也就是钛钨合金，是一种在半导体工艺中广泛应用的 镀膜材料。 它是由钛（Ti）和钨（W）按照特定的比例混合而成的合金。 常见的比例有10/90、30/70。 根据合金中钛和钨的比例不同，可能会有不同的性质。 以下是一些一般性的性质： 物理性质： 密度：TiW的密度在10-19 g/cm³范围内，具体值取决于钛和钨的比例。 熔点：TiW的熔点通常在3000°C以上，取决于合金的具体成分。 热导率：一般在15-50 W/m·K范围内。 硬度：一般来说，随着钨的含量增 …
Microstructure and stress gradients in TiW thin films characterized …
2019年12月1日 · In this present study, a detailed investigation on microstructure, morphology and residual stresses and its correlation to sputtering process will be presented for different TiW films deposited using two sets of deposition conditions.
Properties of Tungsten-Titanium Thin Films Obtained by …
1995年2月1日 · TiW films, prepared by magnetron sputtering of highly pure cast tungsten and titanium, were studied. Auger electron spectroscopy (AES) data showed that the Ti/W ratio in the TiW films was...
Properties of titanium-tungsten thin films obtained by …
1995年2月15日 · TiW films, prepared by magnetron sputtering of highly pure cast tungsten and titanium, were studied. Auger electron spectroscopy (AES) data showed that the Ti/W ratio in the TiW films was nearly constant during the sputtering lifetime of the composite targets.
Influence of post-deposition annealing temperature on structural …
2023年5月22日 · This paper presents an effect of annealing temperature on microstructure and electrical properties of TiW contact films deposited on ITO thin film at a room temperature using DC magnetron sputtering system. As-deposited TiW contact films are annealed at 200, 400 and 600 °C under vacuum environment.
通过 40nm X 射线衍射和透射电子显微镜表征的 TiW 薄膜的微观结 …
使用横截面同步加速器 40 nm X 射线纳米衍射技术研究 TiW 薄膜，该技术表明在拉伸应力 TiW 薄膜生长过程中会发生逐渐的应力松弛，而在压缩薄膜中未观察到这种松弛。
Stress in sputtered TiW thin films with and without
In this work, we show how to control the nucleation of fcc and hexagonal (ω) crystalline phases in Ti films by adding a proper Ti ion flux to the film-forming species.
Microstructure, adhesion strength and thermal conductivity of …
2020年10月21日 · The sputtering of TiW composite film on the AlN substrate was obtained by the simultaneous sputtering of Ti and W dual targets. The phase structure of the deposited film was TiW (Ti x W 1−x, JCPDS 49-1440), which exhibited a bcc structure with a dominant (110) peak (d 110-spacing ∼0.2236 nm corresponding to a lattice parameter of 0.3177 nm ...
Microstructure and stress gradients in TiW thin films characterized …
2019年12月1日 · In this present study, a detailed investigation on microstructure, morphology and residual stresses and its correlation to sputtering process will be presented for different TiW films deposited using two sets of deposition conditions.
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