X-ray diffraction (XRD) revealed distinctive crystal structures, with all coatings exhibiting a common preferred orientation of the (111) plane and TiAlCrN showing a ternary...

2023年5月30日 · X-ray diffraction (XRD) pattern is employed to verify the phase transformation of nanosized TiN crystals at macroscale during oxidation process at 350 – 650 °C (Fig. 1 (h)). All diffraction peaks of untreated TiN match well with cubic TiN phase (space group: Fm -3 m , lattice parameters: a = 4.244 Å, α = 90°), with a NaCl structure that ...

The combination of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) was used for structural analyses, while changes in optical ...

2019年10月25日 · Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the...

2012年1月1日 · Titanium (Ti) and TiN thin films of 200 nm thick were deposited by DC magnetron sputtering process on plain silicon substrates. Initial AFM and XRD characterization study was carried to study the crystal structural properties of these thin films.

2003年4月15日 · The electrical resistivity of TiN films was measured by the standard four-point probe method. X-ray diffraction (XRD) with Cu Kα characteristic radiation (λ=1.54056 Å) was recorded in the 2θ range of 30–80° to identify the crystalline phases

2022年1月5日 · According to XRD results, the oxidation behavior of TiN films occurs at 400 °C. TiN is gradually oxidized to Ti 2 O 3 and TiO 2 with the rise of temperature and time. When there are lots of free electrons in the films, the free electrons will vibrate with the external electromagnetic wave.

The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning...

2019年5月13日 · Titanium nitride (TiN), an alternative plasmonic material to gold, possesses unique physiochemical properties most notable in plasmonic devices. A compatible material within biological environments and the semiconductor industry, TiN exhibits superior properties to noble metals such as high temperature durability, chemical stability, corrosion ...

2 天之前 · Tin (Sn) halide perovskites present considerable potential for the advancement of high-performance p-channel field-effect transistors (FETs), attributable to their low hole effective mass and reduced carrier scattering. ... of ≈16 Å, as confirmed by X-ray diffraction (XRD) peaks (Figure 2a,b). An intense peak at 5.5° corresponding to the ...