The approach to get around this problem is to use SiO2 as a layer on the TiN. Pattern the SiO using an oxide etch. Then the SiO2 can be used as a hard mask to etch the TiN.

2018年11月15日 · TiN etching was characterized for rate and conformality using different electron microscopy techniques. Etching in closed nanotrenches was conformal, starting and progressing all along the 2-D seam, with a rate that was 38% higher compared to a planar film.

An etch rate study was conducted to evaluate the selectivity of a combined aqueous/solvent cleaning chemistry at various temperatures on blanket TiN and TaN wafers to identify the optimum operating regime. A significant improvement of yield with the application of the new cleaning approach has been observed.

2012年12月27日 · The nanoscale wet etching of physical-vapor-deposited (PVD) titanium nitride (TiN) and its application to sub-30-nm-gate-length fin-type double-gate metal-oxide-semiconductor field-effect ...

TiN etching was characterized for rate and conformality using different electron microscopy techniques. Etching in closed nanotrenches was conformal, starting and progressing all along the 2-D seam, with a rate that was 38% higher compared to a planar film.

In this study, a new strategy utilizing Oxide Trim (wet isotropic etching SiO 2) has been proposed for wet lateral etching titanium nitride (TiN) thin films deposited by ALD technology to address the seam issue.

In this paper, we experimentally investigate nanoscale TiN side-etching by wet process and demonstrate the FinFET CMOS fabricated by using the developed TiN wet etching technique. Published in: 2009 International Semiconductor Device Research Symposium

1997年1月1日 · In this paper, a quantitative model for the SC-1 solution is presented. The etching of Ti and TiN is shown to be fundamentally different from the etching of SiO 2 .

2012年9月26日 · Post etch annealing on high-k layer improves film qualities such as suppressed defects – less frequency dependence – and lowers J g further while EOT is slightly increased by about 0.2 nm due to SiO 2 interfacial regrowth. HfSiON gate dielectric shows stronger immunity against TiN wet etch compared with HfO 2.

The etch rate of aqua Regia for gold is approx. 10 μm/min (at room temperature) and can be increased to several 10 μm/min at elevated temperatures. Palladium, aluminium, copper and molybdenum are also etched at room temperature in aqua regia. For etching platinum or rhodium, the etching solution has to be heated to attain a reasonable etch rate.