2015年9月28日 · Here we show, using scanning tunnelling microscopy and supported by potentiodynamic current–voltage measurements, that in three typical valence change memory materials (TaO x, HfO x and TiO...

2025年1月5日 · The Au/TaO x /F-doped SnO 2 memristor shows stable unipolar switching, simplifying control circuits for memristors. The SCLC mechanism offers insights into device operation, increasing its applicability in diverse electronic systems.

2013年10月9日 · This study investigates the switching mode, mechanism, and performance of low-current operated TaO x -based devices as compared to other RRAM devices. This topical review will not only help for application of TaO x -based nanoscale RRAM devices but also encourage researcher to overcome the challenges in the future production.

Photocathodes with RF sputtered TaO x ETLs are stable for CO 2 R for at least 300 min. Techno-economic analysis shows that the reported system, if scaled, could allow for an economically viable production of feedstocks for chemical synthesis under the adoption of specific CO 2 credit schemes, thus becoming a significant component of carbon ...

TaO x is a promising candidate as the insulators in the resistance switching random access memory. The switching uniformity and the associated reliability are particularly important for industrialization. In this paper, we fabricate ITO/TaO x /TiN memory device with four groups of different thickness TaO x films: 15nm, 20nm

2023年1月29日 · The Ta/TaO x /Al 2 O 3 (2 nm)/Pt memristor exhibits bipolar resistive switching characteristics, with excellent uniformity at low switching voltages. The device features excellent nonvolatile memory and reliable synaptic properties.

通过X射线光电子能谱（XPS）和近边缘X射线吸收精细结构（NEXAFS）光谱研究了Ar + 离子溅射过程中非晶Ta 2 O 5 的电子和原子结构的演变。通过特别注意从Ta 4f光谱中减去非弹性散射电子本底，通过光谱分解对XPS Ta 4f光谱进行了分析。

在这项工作中，在具有丰富氧空位的非化学计量 TaO X 薄膜中发现了在 100 Hz 时的高介电常数 2919.5 ，该薄膜是通过使用 Ar 为 20 SCCM 和 O 为 2 SCCM 的混合气体气氛沉积的。 更令人印象深刻的是，TaO X 薄膜的介电常数可以通过调节氧空位浓度来有意调节，而 TaO X的氧空位浓度 通过在化学气相沉积过程中选择不同的氧气气氛浓度来控制薄膜。 由于氧空位引起的极化，TaO X 薄膜的介电常数远高于Ta 2 O 5 薄膜的29.4的介电常数。 这项工作证明了获得高介电响应和 …

An atomistic Monte-Carlo simulator of TaOX-based resistive random access memory (RRAM) with bi-layered Ta2O5-X/TaO2-X stack is developed by considering generati

2022年4月20日 · 使用简便的热分解方法制备了具有 TaO x 中间层的新型 IrO 2-Ta 2 O 5涂层钛阳极。 采用XPS、XRD、SEM和EDS等表面分析技术对Ti/TaO x /IrO 2-Ta 2 O 5的夹层和复合负极进行了表征。 使用阳极极化、CV、EIS 和加速寿命测试测量了具有不同中间层涂层的复合阳极的电 …