Thyristor RAM (T-RAM) is a type of random-access memory dating from 2009 invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.

ThyristorRAM ( T-RAM) is a new (2009) type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.

在设计中常用的RAM有单口RAM：SPRAM（single-port RAM）。 双口RAM：TPRAM（two-port RAM）和真双口RAM：（dual-port RAM）。 在芯片设计中，具体使用哪一种RAM，要根据设计的需要而定，比如读写速度和面积。

Abstract: This article consists of a collection of slides from the author's conference presentation on T-RAM Semiconductor's Thyristor RAM (T-RAM), a high speed high density embedded memory technology for nanoscale CMOS. Some of the specific topics discussed include: the special features, system specifications, and system design for these ...

The T-RAM (thyristor-based random access memory) was characterized using test structures and multi-megabit product die fabricated in a 130 nm SOI logic technology. The reliability lifetime of a nominal bit was investigated by subjecting TCCT devices (thin capacitively coupled thyristor) to a DC current stress.

与传统的ram芯片技术不同，mram中的数据不作为电荷或电流流动存储，而是由磁存储元件存储。 这些元件由两个 铁磁性 板形成，每个铁磁板可以保持由薄的绝缘层分开的磁化。

Thyristor RAM (T-RAM) is a new (2009) type of random-access memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed.

T-RAM is a novel high-density SRAM cell based on a vertical surrounding-gate thyristor with a novel gate-assisted switching mechanism. In this paper, the first experimental integration of the vertical surrounding-gate thyristors and planar NMOS-FETs to make T-RAM cells is reported.

What does T-RAM actually mean? Find out inside PCMag's comprehensive tech and computer-related encyclopedia.

Thyristor-RAM即可控硅RAM技术，在存储密度和速度方面都有其独到之处，尤其适合使用在处理器嵌入缓存上。T-RAM公司就是专为该技术的研发和授权而生。该技术既可用于体硅工艺，也可用于应变硅（SOI）工艺。