2024年11月17日 · SOI（Silicon-On-Insulator）是一种半导体制造技术，其中硅晶圆的一部分被绝缘层（通常是二氧化硅）隔离开来，这样可以有效地减少寄生电容和漏电流，提升器件性能。

目前SOI CMOS中采用的主要是薄膜器件，即 t_ {Si}\leq x_ {dm} 。 这种情况在栅电压的作用下可以使顶层硅膜全部耗尽，因此叫做薄膜全耗尽 (FD) SOI MOSFET。 图3比较了体硅MOSFET、厚膜和薄膜SOI MOS器件的能带图，所有MOS都处于开启状态。

In semiconductor manufacturing, silicon on insulator (SOI) technology is fabrication of silicon semiconductor devices in a layered silicon–insulator–silicon substrate, to reduce parasitic capacitance within the device, thereby improving performance. [1] .

SOI全名为Silicon On Insulator，是指 硅 晶体管 结构在 绝缘体 之上的意思，原理就是在硅晶体管之间，加入绝缘体物质，可使两者之间的寄生 电容 比原来的少上一倍。 优点是可以较易提升 …

2022年7月6日 · 常用的体接触有三种类型：T型栅、H型栅和BTS（Body-Tied-to-Source）型栅。 T型栅就是PD-SOI器件栅极的形状是字母T型，体接触只在T的顶端，所以它是不对称的，存在边缘效应。

We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current ( )/off-current ( ) ratio reaches very high value of at V with a smaller tunneling junction width at the drain.

A novel partially-depleted (PD) silicon-on-insulator (SOI) MOSFET with a T-shaped body (TSB) is proposed for the first time. Simulation results demonstrate that the proposed structure provides nano-scaled PD SOI devices with much better short channel effect immunity and sub-threshold characteristics than those of UTB SOI devices.

2023年3月1日 · Single event upset (SEU) is a critical issue for the static random access memory (SRAM) exposed to irradiated environments. In this paper, an area-efficient 6 T SRAM cell design based on partially depleted silicon-on-insulator (PDSOI) technology is proposed to improve the ability to resist SEU using tunnel-diode body-contact (TDBC) transistors.

2017年11月1日 · In this paper, a new structure for silicon on insulator (SOI) metal semiconductor field effect transistor (MESFET) is proposed. This new structure improves DC and RF characteristics of the device by embedding a region of hafnium oxide which is shaped like a reversed T letter in the channel region.

In each case, the unique benefits of SOI wafers are utilized to fabricate more robust, eficient, and high-performing systems. In this review, we aim to overview the fabrication technology of SOI wafers with their advantages and challenges. Then, we look into the structural, electrical characterization method of fabricated SOI wafers.