Influence of plasma treatment on SiO - Nature
2021年6月23日 · The XPS analysis on plasma treated SiO 2 /Si and Si 3 N 4 /Si surfaces revealed surface composition changes compared to as-grown SiO 2 films (Fig. 2 c, d, and SI …
XPS characterization and optical properties of Si/SiO
1998年7月18日 · The XPS analysis, optical transmittance and photoluminescence caused by an Ar ion laser were studied for Si/SiO 2, Si/Al 2 O 3 and Si/MgO co-sputtered films, which were …
硅负极重点知识：氧含量如何影响SiOx负极结构演变和性能 - 知乎
基于XPS测量，观察到两种主要的与氧相关的机制： 电解质中的氧结合导致Si-Si键的损失和在SiO0.3和SiO薄膜中Si-O键的增加；在SiO2薄膜中发生显著的还原/歧化（LixSiOy和Si−Si浓度 …
XPS studies on SiOx thin films - ScienceDirect
1993年6月2日 · The surface stoichiometry of SiO x thin films (x = 1–2) has been studied by means of X-ray photoelectron spectroscopy. The presence of three Si oxidation states (SiO 2, …
In situ XPS analysis of the electronic structure of silicon and ...
2021年3月15日 · In this study, we focus on reducing the amount of carbon from UHV chamber inside surfaces via silicon and titanium coatings using a low-pressure inductively-coupled …
XPS study of SiO thin films and SiO-metal interfaces
1989年8月7日 · X-ray photoelectron spectroscopy has been used to study the chemical structure of stoichiometric SiO thin films. The Si 2p line of silicon binding energy is found at 101.7 eV, …
硅—二氧化硅界面过渡区的XPS研究 - 物理学报
氧化膜与单晶衬底中Si2p光电子谱峰之间的化学位移 (δ)和强度比 (I0x/Isi)随光电子发射角 (θ)的变化明显地偏离理想界面所预期的结果,表明在硅-二氧化硅的界面处存在化学比为SiOx (0yO4-y …
摘要:用X 射线光电子能谱(XPS) 测定了一系列厚度经过国际比对准确已知的硅晶片上的超薄(1.45 nm<d<7.2 nm) 氧化硅膜的Si 2p 电子能谱和价带谱. 结果表明: SiO2 膜厚d<2 nm 时, Si 2p 结合 …
(PDF) XPS studies on SiOx thin films - ResearchGate
1993年6月1日 · X-ray photoelectron spectroscopy (XPS) results revealed that the low-temperature oxidation of Si films at 823 K yielded SiO 2.
SiOx surface stoichiometry by XPS: A comparison of various …
The surface stoichiometry of SiO x thin films (x = 1,…, 2) has been determined by means of x-ray photoelectron spectroscopy using: (a) two well established methods involving the …