2001年2月6日 · SiGe is the first heteroepitaxial process to be incorporated in a high-volume Si Fab environment and, as such it introduces new characterization challenges. Heteroepitaxial structures are common in the III–V industry and X-ray diffraction (XRD) characterization techniques are well established for these materials.

2023年4月28日 · A weak XRD signal is seen in between the two SiGe peaks in Fig. 2a. A corresponding signal is also seen in an RSM around 333 diffraction (reported in Ref 8 ). These portions in the reciprocal space map correspond to a strain-relaxed Si 0.65 Ge 0.35 whose normal direction is almost aligned to but slightly distributed around the [110] axis of the ...

This article reports the characterization of thin SiGe/Si(100) epilayers using reciprocal space maps measured by a laboratory X-ray instrument and a high-resolution X-ray diffraction study of partially relaxed SiGe/Si thin films.

2019年9月21日 · The composition of SiGe thin films can be determined from the split angle between the SiGe and Si substrate peak in the XRD spectra. Because of the internal reflection at SiGe/Si interfaces, X-rays can cause interference in the epitaxial layer.

2005年12月5日 · The strain, composition and thermal stability of the channel and VS in Ge/Si 1−x Ge x structures for p-HMOS devices was studied by XRD reciprocal space maps and RBS. Samples with nominally 100% Ge and thicknesses of 16 and 20 nm, as deposited and after annealing at 650 °C, were studied.

2022年9月12日 · The reciprocal scape composition and strain of SiGe films were characterized by (224) XRD-RSMs with Cu Kα radiation. The in-plane composition/strain distributions were analyzed by micro-Raman...

2005年9月29日 · It is demonstrated how high resolution X-ray diffractometry (XRD) in comparison to different other characterization techniques, reflectometry, spectroscopic ellipsometry, Auger electron spectroscopy, secondary ion mass spectroscopy, and transmission electron microscopy, can be used to analyze the layer properties of typical SiGeC hetero-bipolar ...

Epitaxial SiGe S/D stressors for PMOS mobility enhancement • Also Si:C / Si:P S/D stressors for NMOS, but less widespread • Used for R&D, CVD chamber qual., process diagnostics / ramp and in-line metrology •Solid metrology pads less relevant / not available • Transition from planar to 3D (FinFET) devices • Novel channel materials,

An epitaxial SixGey layer on a silicon substrate was quantitatively evaluated using rocking curve (RC) and reciprocal space map (RSM) obtained by powder X-ray diffraction (XRD), energy-dispersive...

High resolution XRD (HR-XRD) is a well known method for measuring the composition and thickness of compound semiconductors such as SiGe, AlGaAs, InGaAs, and other materials. When dopants or impurities are added substitutionally to a single crystal lattice the lattice will be strained by the presence of the dopant atoms.