The PIN diode is defined by n-type and p-type implants in the germanium with peak dopant density 1018cm-3. The germanium is assumed to form an abrupt heterojunction with the …

Abstract: 100% Ge pin-photodetectors grown on SiGe strain relaxed buffer (SRB) layers are presented, For integrated detectors the SRB layer growth as well as the subsequent SiGe …

2024年4月25日 · 硅基锗（SiGe）PIN光电探测器是一种能够将光信号转换为电信号的半导体器件。 它主要由硅基锗材料构成，这种材料可在现有的半导体工艺中方便地制备。

2004年3月15日 · SiGe PIN photodiodes monolithically integrated on silicon substrates are promising candidates for low cost photodetectors for optical fiber communications at 1300 and …

SiGe based pin photodetector structures can exhibit significant built-in electric fields of several kV cm -1 inside the i -Ge/SiGe layers, which overcome recombination processes at lattice …

2019年1月31日 · The PIN photodiode is formed by the Si N \ (^+\) -subcollector, by the Si N \ (^-\) collector, and the SiGe P \ (^+\) base layers of the HBT (see Fig. 4.2). The I-absorption layer is …

2009年12月11日 · This letter presents a fully integrated highly linear 4-bit SiGe PIN diode phase shifter MMIC for Ku -band phase-array application in the standard SiGe BiCMOS process. …

SiGe pin photodetectors, designed to function as elements in NIR imaging focal plane arrays (FPAs), have been fabricated on 300 mm Si substrates. A two-step low/high temperature …

2017年2月17日 · 在前期的研究中, 我们在SOI材料的基础上提出了一种新型Si/SiGe/Si双异质结PIN电学调制结构,可以有效提高载流子注入效率, 降低调制功耗. 为了进一步研究这种新型调制 …

The process integration of infrared-sensitive PIN photodiodes and CMOS transistors in a single 200 mm SiGe substrate is reported in this paper. Si 0.76 Ge 0.24 virtual substrates with a …