2010年2月1日 · In scanning electron microscopy (SEM), a very ambitious goal would be the identification of various components of a specimen from their grey levels in the corresponding image, i.e. compositional identification.

C. P. Sealy et al. Secondary electron dopant contrast in the SEM 313 will describe how local differences in ionization energy between differently doped and undoped material give rise to contrast in the SE imaging mode of a SEM. Here we will use the definition of the ionization energy as the energy required to move an electron from the top of the

BSE imaging is used to differentiate contrasts in a material comprising of different chemical compositions. It can locate regions of different atomic number and high atomic number impurities. It is also very helpful for obtaining high resolution compositional maps of a sample and for quickly distinguishing different material phases.

2022年9月25日 · Scanning electron microscopy for dopant contrast imaging (SEMDCI), where the secondary electron (SE) image contrast is used to determine the dopant level of a semiconductor sample, is an ideal candidate for Si dopant profiling, especially for silicon samples with surface nanotexturing or black silicon (BSi) technology.

major advantages is that it can be performed within nearly any field-emission scanning electron microscope (SEM) equipped with either a backscattered electron (BSE) or forescattered electron (FSE) detector; such setups are quite common, and the BSE geometry is used here.

2021年9月1日 · The damage-induced voltage alteration (DIVA) contrast mechanism in scanning electron microscope (SEM) has been studied in broad range of the primary electron beam energies, with a special emphasis on the ultra-low energy range.

2018年3月1日 · A method for increasing compositional or material contrast of a standard semiconductor BSE detector in a scanning electron microscope (SEM) by compensation of the topographic contrast component is proposed. Compensation is based on the physical properties of backscattered electron emission and topography information of the specimen's surface.

Electron channelling contrast Imaging (ECCI) provides rapid and non-destructive characterisation of the structural properties of materials in a scanning electron microscope (SEM). Going beyond simple topographic microscopy, ECCI is used extensively for detailed characterisation of crystalline materials ranging from metals to ceramics and ...

A method for increasing compositional or material contrast of a standard semiconductor BSE detector in a scanning electron microscope (SEM) by compensation of the topographic contrast component is proposed. Compensation is based on the physical properties of backscattered electron emission and topog …

2020年10月1日 · Therefore, it is essential to optimize material contrast by selecting adequate parameters for SEM imaging. In SEM, common electron signals can be divided into secondary electron (SE) and backscattered electron (BSE) signals.