借助FIB、TEM、SEM等显微分析技术的4nm先进制程芯片解剖
下面我们利用透射电子显微镜（tem），对芯片的晶圆制造工艺及更加细微的结构进行了解剖。 晶圆制造是整个芯片制造工艺中最为复杂和困难的地方，随着先进晶圆制造工艺关键尺寸的不断 …
探索 AI 时代的核心：嵌入式 SRAM 的重要性与制程分析|内存|晶体管|存储器|sram…
2024年10月25日 · 精密观察sram结构的核心技术：tem. 要深入观察先进制程中的6t sram元件结构及其精细的制程层次，tem（穿透式电子显微镜）或 stem（扫描穿透式电子显微镜）是不可或 …
MA-tek
2024年10月18日 · Cs-TEM(球面像差校正TEM)是目前市面上可以达到0.5A(埃,10000000000A=1米)空间分辨率的设备，也就是Cs-TEM是目前放大倍率最高的设备。另外，SEM及TEM可以配 …
14nm SRAM场效应晶体管TEM成像 - 哔哩哔哩
https://www.youtube.com/watch?v=4hJzqR6YsGM制备了SRAM器件的TEM薄片样品，保证了单个翅片的厚度小于20nm。从翅片的短方向观察，可以清楚地观察到几纳米厚的栅氧化层和硅晶 …
from these SRAM-specific test structures show good correlation to yield results and in-line SEM observa-tions, and enable us to improve SRAM yields quickly. We have also designed SRAM …
Top-down scanning electron microscope (SEM) image of a 6-T FinFET SRAM ...
Top-down scanning electron microscope (SEM) image of a 6-T FinFET SRAM cell with selective independent gating of the pass-gate transistors. The pull-down and pull-up FinFETs have …
Targeted TEM SRAM-Like Analysis Without Delayering
2024年10月28日 · This paper discusses one such improvement where it is shown to be possible to target silicon (Si) devices, their metal contacts, or any other location in the wafer stack in a …
(a) TEM image and (b) SNDM image of a SRAM cell transistor.
Figure 6 shows a section of a TEM image of p-channel of an SRAM cell transistor together with the SNDM image of the same part. As can be seen from this figure, the source/drain and the …
90nm technology SRAM -junction stain TEM - 百度文库
This article describes a 90nm technology SRAM soft fail analysis. The bitmaps of affected wafers show a large number of wafer edge dies failing with single cell cluster fails at supply voltages …
Design of 6T FinFET SRAM cell at 7nm - IEEE Xplore
In this paper, design of 6T FinFET SRAM cell is presented at 7nm technology using ASAP7 PDK and Cadence virtuoso tool. Besides, parameters like power dissipation, delay, power delay …