SRAM designs for 5nm node and beyond: Opportunities and challenges ...
In this paper, we will present a holistic approach for 6T-SRAM designs using gate-all-around (GAA) transistors, which will firmly address process integrations and circuit aspects arising at …
Carbon Nanotube SRAM in 5-nm Technology Node Design, …
In this article, we propose a carbon nanotube (CNT) field-effect transistor (CNFET)-based static random access memory (SRAM) design at the 5-nm technology node
Stable SRAM cell design for the 32 nm node and beyond
SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. 6T-SRAM can be optimized for stability by choosing the …
Projected performance of Si- and 2D-material-based SRAM
2024年6月21日 · We have analysed and compared the signal stability, power consumption and speed performance of static random-access memory (SRAM) circuits based on Si FETs and …
GitHub - aieask/mdw21: Design of 6T, 8T and 10T SRAM Cells …
This workshop presents a basic overview of different SRAM Cell Designs using LTSpice and ASU's Arizona State Predictive PDK (ASAP) 14nm FinFET node, using an intuitive approach …
A comprehensive analysis of different 7T SRAM topologies to …
2022年3月16日 · So, in this paper, a comprehensive review of pre-existing SRAM cell configurations for seven transistor (7T) is presented. Each cell is designed at 32 nm …
Design of Energy-Efficient Cross-coupled Differential Photonic-SRAM …
2025年3月26日 · Abstract page for arXiv paper 2503.19544: Design of Energy-Efficient Cross-coupled Differential Photonic-SRAM (pSRAM) Bitcell for High-Speed On-Chip Photonic …
FinFET based SRAMs in Sub-10nm domain - ScienceDirect
2021年8月1日 · FinFETs are promising emerging devices, which can improve the performance of SRAM designs at lower technology nodes. This review paper presents different types of …
Design and analysis of CMOS based 6T SRAM cell at
2020年1月1日 · This paper demonstrated CMOS based 6T SRAM cell design and the results are compared for different technology nodes (180 nm, 90 nm, 65 nm, 45 nm). It is demonstrated …
A Comprehensive Study of Nanosheet and Forksheet SRAM for Beyond N5 Node
Abstract: SRAM bitcell area reduction, lower SRAM parasitic resistance, and higher drive strength are necessary to continue with technology scaling. Nanosheet (NSH) technology improves …