2006年1月1日 · Raman scattering is a powerful non-contact and non-destructive characterization tool for SiC polytypes for both the lattice and electronic properties. Here, I will briefly review two recent Raman experiments on SiC; metal/SiC interface reactions probed by visible lasers and ion-implantation damages probed by deep UV lasers.

2016年1月12日 · We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spectroscopy. The results of the Raman measurement of the scratching grooves revealed that there were residual stress, defects, and stacking faults.

Silicon carbide (SiC) is a material with more than 130 variants of polytypes. All of them exhibit refractory nature and high thermal conductivity, yet each one has a unique lattice and electronic structure.

2024年2月1日 · With the development of spatial resolution of Raman spectroscopy, micro-Raman spectroscopy plays an important role in detecting and calculating residual stress by analysing the Raman shift of SiC single materials.

Silicon carbide (SiC) is often used for electronic devices operating at elevated temperatures. Spectroscopic temperature measurements are of high interest for device...

1983年12月1日 · AMORPHOUS SILICON CARBIDE (a-SiC) has attracted much attention as transparent electrodes for solar cells and as light emitting diodes with wide spectral range. The a-SiC films have been prepared by various methods, e.g. plasma CVD [1], glow discharge [2] and reactive sputtering [3].

拉曼光谱测量方法可以提供有关材料晶体完美度的有关信息，结合空间相关模型（SCM）和LO-声子和等离子体激元耦合（LOPC）模型，常用于材料定量分析。 广西大学冯哲川教授课 题组采用化学气相沉积法在硅衬底上生长一系列不同厚度的3C-SiC薄膜。 采用不同的激发源做拉曼光谱研究，并应用空间相关模型、本振声子和等离子体耦合 (LOPC)模型来分析薄膜的结构变化，得到不同深度薄膜光学模式的特征变化。 本文使用四个样本C1，C2，C3和C4。 C1，C2和C4的三个 …

2025年1月2日 · In this article, I tried to provide an introduction to the structural properties of the SiC’s as revealed in their Raman spectra. With the goal of understanding how Raman microscopy can be useful in the analysis of industrial products, I described the origins of several defects that I found in these samples.

This article provides an overview of recent Raman scattering studies for defects in SiC crystals. We also discuss Raman studies on electronic prop-erties and their application to defect characterization. In Sect. 2, Raman scattering techniques for detecting defects are outlined. Section 3 focuses on theevaluationofdefectsin4H-and6H-polytypes ...

2019年8月17日 · Raman spectroscopy is an optical characterization method that detects vibrations based on the inelastic scattering of light [16, 17, 18]. The Raman spectrum of a crystallized compound is composed of internal modes of vibration due to the polyatomic species and of external modes characterizing the lattice, thus related to the crystalline symmetry.