2015年2月23日 · Abstract: SiC power devices have the ability to greatly outperform their Silicon counterparts. SiC material quality and cost issues have largely been overcome, allowing SiC to start competing directly with more traditional Si devices. 150 mm substrates and epitaxy are now commercially available.

2014年12月15日 · In this article, we will review the SiC single‐implant no epitaxial regrowth vertical channel junction field‐effect transistor (JFET). The feasibility of efficient 1200 V normally OFF JFET...

2019年12月1日 · In this paper, the fabrication and properties of the third generation SiC fibers are compared and discussed. The preparation processes of the third generation SiC fibers reinforced SiC matrix composites and their application in aeroengine and nuclear energy fields are summarized, while their future development is prospected as well. 1. Introduction

Silicon carbide (SiC) junction field effect transistor and SiC resistor (SiC JFET-R) integrated circuits (ICs) have uniquely demonstrated prolonged operation above 450 °C that promises significant operational improvements to a variety of NASA missions.

2022年12月15日 · Silicon Carbide (SiC) JFETs are robust, with high-energy avalanche and short-circuit withstand ratings, and significantly, they beat all other technologies for the FOM on-resistance per unit die area RDS (on) × A, achieving a value close to the theoretical limit for the material (Figure 1).

The silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process. The fabricated super-junction JFET achieves a breakdown voltage of 1000V with specific on-resistance of 1.3mΩ ·cm 2 .

2024年12月1日 · Silicon carbide (SiC), which has excellent properties such as low density, high thermal conductivity, resistance to ablation and erosion, and wear resistance, is expected to be successfully applied in these fields.

2014年12月15日 · In this article, we will review the SiC single-implant no epitaxial regrowth vertical channel junction field-effect transistor (JFET). The feasibility of efficient 1200 V normally OFF JFET operation will be investigated. The all-SiC JFET-based cascode switch will be introduced and aspects of its operation evaluated.

2024年9月27日 · Two levels of extremely durable tantalum silicide metal are used to interconnect basic JFET and resistor devices implemented in the SiC. See slides 20-34 of the below link that illustrate the basic NASA Glenn IC SiC JFET-R fabrication process flow to the degree needed to accomplish circuit design and layout.

碳化矽 （英語： silicon carbide，carborundum），化學式SiC，俗称 金刚砂，宝石名称 钻髓，为 硅 与 碳 相键结而成的 陶瓷 状 化合物，碳化矽在大自然以 莫桑石 这种稀有的 矿物 的形式存在。 自1893年起碳化矽粉末被大量用作磨料。 将碳化矽粉末烧结可得到坚硬的陶瓷状碳化矽颗粒，并可将之用于诸如汽车刹车片、离合器和 防弹背心 等需要高耐用度的材料中，在诸如 发光二极管 、早期的无线电探测器之类的电子器件制造中也有使用。 如今碳化矽被广泛用于制造高温、高 …