BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成的全SiC半桥模块。 适合电机驱动、逆变器、转换器、太阳能发电、风力发电及感应加热装置等用途。 罗姆SiC器件 什么是SiC？ * 本产品是标准级的产品。 本产品不建议使用于车载设备。 Low surge, low switching loss. High-speed switching possible. Reduced temperature dependance.

1200V, 576A, Half bridge, Full SiC-Power Module with Trench MOSFET. BSM600D12P3G001 is a half bridge module consisting of SiC-UMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

SiC（碳化矽）功率模組 BSM600D12P3G001是由羅姆公司生產的SiC-UMOSFET和SiC-SBD構成的全SiC半橋模組。 最適合馬達驅動、逆變器、轉換器、太陽能發電、風力發電及感應加熱裝置等用途。

罗姆开发出6款沟槽栅结构sic mosfet “sct3xxx xr系列”产品（650v／1200v耐压），非常适用于要求高效率的服务器用电源，太阳能逆变器及电动汽车的充电站等。 此次新开发的系列产品，采用4引脚封装（to-247-4l），可充分地发挥出sic mosfet本身的高速开关性能。

評估板可輕鬆評估rohm的 sic蕭特基二極體, sic mosfet, sic電源模組 （結合了sic sbd和mosfet）以及高耐熱功率模組等系列產品。 這些小型、高效的半導體元件能夠顯著縮小最終產品的尺寸，搭配評估板使用還可以幫助客戶進行應用的試作和初期開發。

bsm400c12p3g202是由sic-umosfet和sic-sbd构成的斩波模块。 适合电机驱动、转换器、光发电及风力发电用途。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？

Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). SiC devices have lower short cuicuit withstand capability due to high current density. Please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible.

Evaluation boards make it easy to evaluate ROHMs broad portfolio of SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules.

2016年4月4日 · In addition to 120 A and 180 A full SiC power modules, ROHM offers a 300 A type (BSM300D12P2E001) that enables support for larger power applications such as high capacity power supplies industrial equipment. Moreover, significantly reduced switching loss (compared with conventional Si IGBT modules) makes high-frequency operation possible ...

SiC Power Module BSM600D12P3G001 Application Circuit diagram Motor drive Inverter, Converter Photovoltaics, wind power generation. Induction heating equipment. Features 1) Low surge, low switching loss. 2) High-speed switching possible. 3) Reduced temperature dependence. Construction