2023年5月12日 · We demonstrate a significant quantum efficiency enhancement of InGaN red micro-light-emitting diodes (μLEDs). The peak external quantum efficiency (EQE) of the packaged 80 × 80 μm 2 InGaN red μLEDs was largely increased to 6.0% at 12 A/cm 2, representing the significant process in exploring the efficiency of InGaN red μLEDs. The ...

2024年3月20日 · In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 A/cm 2. To achieve this, we introduced GaN cap layers on …

2021年8月25日 · It has been shown that the external quantum efficiency (EQE) of AlInGaP red μLEDs markedly decreases as the size goes to very small dimension. Here, we demonstrate size-independent peak EQE of 611 nm InGaN red μLEDs. Packaged μLEDs show a peak EQE varied from 2.4% to 2.6% as the device area reduces from 100 × 100 to 20 × 20 μm 2.

2022年6月27日 · Here, we report highly efficient InGaN-based red light-emitting diodes (LEDs) grown on conventional c -plane-patterned sapphire substrates. An InGaN single quantum well active layer provides the red spectral emission. The 621-nm-wavelength LEDs exhibited high-purity emission with a narrow full-width at half-maximum of 51 nm.

2024年6月12日 · Red-emitting perovskite LEDs were fabricated by stabilizing their octahedral structure with a ligand to yield devices with enhanced efficiency, spectral stability and lifetime.

2024年1月29日 · In this study, a citric acid treatment strategy is proposed to improve the efficiency of red micro-LEDs, and the etching uniformity of different concentrations was first confirmed. We optimized the concentration of citric acid to 1:1 and modulated the wet etching time at 0, 30, 60, 90, and 120 s to treat the sidewalls of devices.

2020年4月4日 · Quantum dot light-emitting diodes (QLEDs) with an excellent external quantum efficiency (EQE) and an excellent lifetime almost meet the requirements for low-brightness displays. However, the short operation lifetime under high brightness limits the application of QLEDs in outdoor displays and lightings.

2023年11月1日 · Recently, Lu et al. from Fudan University successfully transferred InGaN-based red micro-LEDs grown on a Si substrate to a glass substrate, achieving a significant improvement in optical power and peak EQE [83].

2022年10月17日 · It is still challenging to achieve high-efficiency pure-red (620–650 nm wavelength) perovskite light-emitting diodes (PeLEDs). Herein, we report pure-red PeLEDs with Commission Internationale de l’Eclairage coordinates (0.703, 0.297) meeting the Rec. 2020, an external quantum efficiency of 20.8%, and a luminance of 3775 cd/m 2 .

2020年6月1日 · Both high external quantum efficiency (EQE) (>10%) and brightness (>30000 cd m −2) are attained simultaneously; the peak EQE of the QLEDs reached 17.3% with a brightness of 60108 cd m −2.