Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.

RRAM, also known as resistive random access memory or ReRAM, is a form of non-volatile storage that operates by changing the resistance of a specially formulated solid dielectric material.

2020年1月16日 · This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms.

2017年9月21日 · Resistive RAM (ReRAM), one of a handful of next-generation memories under development, is finally gaining traction after years of setbacks. Fujitsu and Panasonic are jointly ramping up a second-generation ReRAM device. In addition, Crossbar is sampling a 40nm ReRAM technology, which is being made on a foundry basis by China’s SMIC.

ReRAM, standing out among the next-generation memory technologies, promises to revolutionize data storage with its array of compelling advantages. From impressive durability to fast performance, ReRAM’s numerous benefits make it a promising alternative to conventional memory solutions.

2023年3月9日 · Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks.

Resistive Random-Access Memory (ReRAM) is a type of non-volatile memory (NVM) that stores data by changing the resistance of a material. Unlike traditional memory technologies that rely on electric charge (like DRAM) or floating gate transistors (like NAND flash), ReRAM uses the resistance state of a material to represent binary data.