This paper investigates the use of pulsed-RF decoupled plasma nitridation (DPN) for the growth of oxynitride gate dielectrics for 65 nm general purpose (GP) applications. The effects of several DPN plasma parameters, base oxide thickness and post-nitridation anneal (PNA) conditions on device performance were evaluated.

2004年9月1日 · In order to understand how N2 plasma conditions impact on the incorporation of nitrogen species into a thin SiO2 (1.4 nm), tuning of some pulsed RF (pRF) Decoupled Plasma Nitridation (DPN) process parameters was performed: duty cycle (DC) or on-time per period, frequency (f), process time (t) and some cross-combinations (DC*f, DC*t, DC*f*t).

In this paper, we report the results on gate dielectric improvement by PNA optimization such as reduction of gate leakage current density and improvement of NBTI, and effects of post clean annealing (PCA) and post oxidation annealing (POA) on transistor performance.

2001年11月1日 · Nitridation of the gate oxides was carried out using either remote plasma nitridation (RPN) or decoupled plasma nitridation (DPN). The RPN process was performed using a remote microwave N 2 plasma at 550°C, 2.8 Torr, 3.3 slm total flow, 79% He, and 180 s. The typical DPN process uses RF power and runs at 550°C, 20 mTorr, in N 2. Two ...

In this paper, we investigate the suitability of oxynitrides formed by pulsed-RF DPN for 65 nm GP CMOS devices. For these applications, the smallest targeted IOFF were below 10 nA/mm for EOTs £...

The effects of radio frequency (RF) source power for decoupled plasma nitridation (DPN) process on the electrical properties and Fowler-Nordheim (FN) stress immunity of the oxynitride gate ...

2006年2月1日 · The nitrided layers investigated in this study were formed by performing a pulsed-RF decoupled plasma nitration (DPN) process on thin SiO 2 grown base layers. The aim of DPN is to specifically incorporate a high level of nitrogen preferentially onto the top surface of an ultra-thin gate oxide [1].

In this paper, we report that the nitrogen profile of DPN gate dielectric can be engineered primarily by tuning the plasma pressure after optimizing other DPN process parameters to solve these problems.

2011年7月28日 · In order to understand how N 2 plasma conditions impact on the incorporation of nitrogen species into a thin SiO 2 (1.4 nm), tuning of some pulsed RF (pRF) Decoupled Plasma Nitridation (DPN) process parameters was performed: duty cycle (DC) or on-time per period, frequency (f), process time (t) and some cross-combinations (DC*f, DC*t, DC*f*t).

2003年10月16日 · This paper investigates the use of pulsed-RF decoupled plasma nitridation (DPN) for the growth of oxynitride gate dielectrics for 65 nm general purpose (GP) applications. The effects of several...