In this work, the influence of high- k /metal gate (HKMG) thermal processes such as post dielectric annealing (PDA), post metal annealing (PMA), and post amorphous Si cap annealing (PCA) on metal boundary effect (MBE) in FinFET is investigated. It is revealed that the PDA temperature increase leads to more severe MBE.

2016年3月14日 · Abstract: A two-step post-metallization annealing (PMA) process has been developed and it has demonstrated its significant benefit for high-k metal gate (HKMG) in reducing post chemical mechanical polish (CMP) Al corrosion defects.

2022年12月15日 · In this study, we are mostly focused on the effect of PMA on the electrical performance of HEMTs, including gate resistivity, transconductance (g m), small-signal gain, output power (P out), and threshold voltage (V th) shift. The devices are fabricated in-house, along with the epitaxial growth of the AlGaN/GaN structure on a 3-inch SiC.

2022年4月1日 · In this paper, impacts of post metallization annealing (PMA) temperatures on interfacial and electrical properties of Ge n-channel metal–oxidesemiconductor field-effect transistors (nMOSFETs) with ZrO 2 /Al 2 O 3 /GeO x /Ge gate stacks employing post-oxidation passivation are systematically evaluated.

Post metallization annealing (PMA) is used to reduce the defects at the interface, such as fixed oxide charges, oxide trapped charges, and interface charges [5]. Previous work has demonstrated that oxygen vacancies can be passivated for device with noble metal gate by oxygen diffusion through the gate metal [6].

2005年7月1日 · We investigate the effects of fluorine (F) and chorine (Cl) on the gate oxide integrity of W/TiN/SiO 2 (3 nm)/Si metal–oxide–semiconductor (MOS) structure as a function of W deposition method and post-metal anneal (PMA) process.

2019年6月1日 · It is found that MOS capacitors with TiN gate electrodes can provide better Y2 O 3 /SiGe MOS interfaces than those with Al, Au or and W gate stacks after post metallization annealing (PMA) at each optimized temperature.

2020年4月2日 · In this study, we present two regioregular poly (3-hexylthiophene-2,5-diyl) (rr-P3HT)-based top-gate bottom-contact configured organic thin-film transistors (OTFTs) using poly (α-methyl acrylate) (PMA) and poly (methyl methacrylate) (PMMA) polymers separately as gate insulators for comparison.

2014年8月12日 · We investigated the Al post metallization annealing (PMA) effect on Al 2 O 3 /GeO X /Ge gate stacks. The Al-PMA is effective for Al 2 O 3 /GeO X /Ge gate stacks, similar to the case of SiO 2 /GeO 2 gate stack. It was found that interface states density in the lower half of the band gap and slow trap density can be reduced by Al-PMA at 400°C.

2024年4月1日 · We report a new N/PFET Gate Patterning Boundary Proximity layout dependent effect in high-k dielectric/Metal Gate (HK/MG) MOSFETs which causes anomalous threshold voltage (Vt) modulation for...