研究表明通过 CVD 直接生长的约 1.3nm 的双层 3R MoS2 在室温下具有面外铁电性。 通过 DFT 计算说明了基于层间滑动的界面铁电起源，SKPM 和 Dart - SS - PFM 检测到其自发极化和铁电转换，Au/3R MoS2/Pt 器件性能使其有望用于新型存储器。 CVD 合成的高质量铁电 3R MoS2 将推动其他双层或多层铁电 TMDs 的发展并增强原子层铁电半导体在现代电子中的应用。 研究发现的双层 3R MoS2 的室温铁电性为非易失性存储器件提供了理想候选材料。 有助于推动 2D 材料 …

2022年12月9日 · We conducted out-of-plane PFM measurements of 2H monolayer MoS 2 transferred onto Au-coated SiO 2 /Si under ambient conditions as a comparison in Figure 3. In contrast to the 3R monolayers, the typical butterfly curves in the PFM amplitude plot and hysteresis loop in the phase graph disappear.

2024年12月30日 · This work demonstrates the rewritable, non-volatile memory devices at room-temperature with two-dimensional sliding ferroelectric rhombohedral-stacked bilayer MoS2. The device shows overall good...

2019年9月1日 · Using PFM measurements, we demonstrated that the corrugated CVD-grown MoS 2 monolayer can present piezoelectricity and polarization switching behavior. In particular, the large-corrugated region of the CVD-grown MoS …

2022年3月15日 · Ferroelectric MoS2 belongs to the distorted trigonal structural 1T” phase, where a spontaneous polarization is inferred by its P3m1 space-group symmetry and corroborated by theoretical modeling.

2024年6月3日 · Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS 2 /Pt device exhibits a switchable diode effect.

2018年8月21日 · In this paper, we demonstrate optically induced polarization switching in BaTiO 3 -based ferroelectric heterostructures utilizing a two-dimensional narrow-gap semiconductor MoS 2 as a top...

Download scientific diagram | PFM measurements, the vdW 3R MoS2 capacitor and the ferroelectric property of the ST-3R bilayer MoS2 a, Phase θ and amplitude A of piezoresponse signal versus...

2017年11月5日 · Here, we present a novel route for achieving MoS 2 (2D)/WS 2 heterojunctions arrays by combining radio frequency (RF) magnetron sputtering, stencil mask lithography and vapour phase sulfurization.

2022年5月27日 · mos2/ws2异质双层的两种不同堆叠排列在原子力显微镜中看起来非常相似。作者进行了共振放大pfm以获得oop压电常数，将结果映射在1.2和2.0v之间的不同电压下（图2c））。 图 2. mos2/ws2异质双层在导电pt涂层基板上的pfm数据 【铁电滞后】