In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor.

Due to positive holes these semiconductors are called p-conductive or p-doped. Analog to n-doped semiconductors, the holes are the majority charge carriers, free electrons are the minority charge carriers. Doped semiconductors are electrically neutral. The terms n- and p-type doped do only refer to the majority charge carriers.

In this article, you will learn about the chemical and physical principles underlying semiconductors, using LEDs as a case study. You will also learn about how doping a semiconductor’s p–n junction with various alloys can alter its electroluminescent properties, such as the color of light emitted.

2024年7月12日 · There are two main types of semiconductor doping: P-type and N-type. Together, they give rise to an extrinsic semiconductor. 1. P-type. In P-type doping, impurities create an excess of positively charged holes in the crystal lattice, changing its conductivity. Elements from Group III of the periodic table, like boron, aluminum, or gallium, are ...

P型半导体也叫空穴型半导体,是以带正电的空穴导电为主的半导体,或者说是空穴浓度远大于自由电子浓度的杂质半导体. 在纯净的硅晶体中掺入微量三价元素 (如硼、铝、铟),由于这些三价元素周围有3个价电子,与周围4价硅原子组成共价结合时缺少一个电子,形成一个空穴,取代了晶格中硅原子的位置.在P型半导体中,空穴为多子,自由电子为少子,空穴相当于带正电的粒子,在这类半导体的导电中起主要作用. 由于P型半导体中正电荷量与负电荷量相等,故P型半导体呈电中性. N型半导体与P …

2018年7月29日 · 半導體的摻雜(doping)因材料而異，一般來說要形成 n 型或 p 型需要不同的摻雜物(dopant)，但氮化鎵(GaN)卻能用同一種摻雜物達成。 CASE 報科學 找知識，來讀 CASE 報科學

Doping is a technique used to vary the number of electrons and holes in semiconductors. Doping creates N-type material when semiconductor materials from group IV are doped with group V atoms. P-type materials are created when semiconductor materials from group IV …

2024年11月7日 · In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe 2 thin films with specific p -type...

The energy structure of a semiconductor can be altered by substituting one type of atom with another (doping). Semiconductor n-type doping creates and fills new energy levels just below the …

In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin lms with specic. type or...