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Crystallization behavior of GeSb2Se4 chalcogenide glass
2014年3月15日 · Differential scanning calorimetry (DSC) and X-ray diffraction (XRD) analysis were used to study crystallization in GeSb 2 Se 4 glass under non-isothermal conditions in dependence on particle size. The crystallization kinetics was described in terms of the Johnson–Mehl–Avrami (JMA) and autocatalytic (AC) models.
two, in this paper we examine the structures of both phases of GeSb2Te4 at various temperatures by x-ray powder diffraction using synchrotron radiation facilities. The results of our investigation are as follows: the
Physicochemical Interactions in the GeSb - Springer
2020年10月9日 · The GeSb2Te4-based region of the solid solution (15 mol % PbSb2Te4) is revealed. The congruently melting compound GePbSb4Te8 is formed with the ratio of the initial components 1:1. Single crystals of the GePbSb4Te8 quaternary compound are formed by the method of chemical transport reactions.
基于GeSb/Sb多层薄膜同时具有低电阻漂移和超快相变速度,Journal …
2023年9月13日 · GeSb/Sb多层薄膜比纯Sb薄膜具有更高的结晶温度、更好的数据保持能力和更低的电阻漂移,这表明它们具有优异的热稳定性和电阻识别的准确性。 X射线衍射和原子力显微镜测试结果表明,GeSb间隔层可以抑制Sb薄膜层的晶粒生长,从而降低薄膜表面的粗糙度和电位 ...
Physicochemical interactions in the GeSb 2 Te 4 -GeBi 2 Te 4 system
2012年3月27日 · A GeBi2Te4-based solid solution region has been discovered; its boundary at 300 K reaches 5 mol % GeSb2Te4. The compositions and melting temperatures of eutectics have been determined. The GeSb2Te4-GeBi2Te4 system has been studied for the first time using a complex of physicochemical methods, and its phase diagram has been constructed.
Selective dry etching of silicon with heat-mode resist GeSb for the ...
A simple and effective method to prepare micro-/nano-structures on silicon surfaces through the inorganic resist GeSb was proposed and investigated in this paper. Combined with the laser heat-mode lithography and the plasma etching, high-resolution relief patterns with a minimum linewidth of 165 nm, which is much smaller than the diffraction ...
Effect of selenium doping on the crystallization behaviors of GeSb …
2018年5月1日 · To determine the effect of Se doping on GeSb, the physical and electrical properties of Se-doped GeSb films were investigated. The undoped GeSb film crystallizes in the rhombohedral structure (Sb phase). However, when the Se concentration increased, phase separation is observed.
GeSb molar mass
摩尔质量(英文名Molar mass或molar weight)是一摩尔化学元素或者化合物的质量,单位g/mol。 摩尔 是一种标准科学单位,用于测量大量非常小的实体,例如原子和分子。
Electron density modulation of a metallic GeSb monolayer by …
The computed electronic properties reveal the metallic nature of the pristine GeSb monolayer, indicating its potential for utilization as an electrocatalyst. The site-dependent catalytic response of the GeSb monolayer indicates that the Sb-site is more sensitive towards hydrogen adsorption amongst the considered sites.
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