Here, we report a novel method for CVD-based growth of monolayer molybdenum disulfide (MoS 2) by using thermally evaporated thin films of molybdenum trioxide (MoO 3) as the molybdenum (Mo) source for coevaporation.

Molybdenum disulfide (MoS2) synthesized via chemical vapor deposition (CVD) is commonly accompanied by some intermediate products in the form of MoO3−x, resulting in MoS2–MoO3−x hybrids with diverse structures. In this study, we show that through the rational design of heating evaporation rate of the precurs Crystal Growth

2018年9月12日 · Chemical vapor deposition (CVD) is used widely to synthesize monolayer and few-layer transition metal dichalcogenide molybdenum disulfide (MoS 2), a two-dimensional (2D) material with various applications in nanoelectronics, catalysis, and optoelectronics.

2022年9月27日 · Chemical vapor deposition (CVD) through sulfidation of MoO 3 is one of the most important synthesis techniques to obtain large-scale and high-quality...

In chemical vapor deposition synthesis, the sulfurization of MoO 3 powders is an essential reaction step in which the MoO 3 reactants are converted into MoS 2 products. Recent studies have suggested using an H 2 S/H 2 mixture to reduce MoO 3 powders in an effective way.

ALD MoO3 在 MoS2 的 CVD/硫化中提供两个关键优势，即均匀升华和控制 Mo 前体蒸气的量。 虽然 MoO3 膜的均匀升华提供了均匀的 Mo 蒸气，使 MoS2 能够在整个基板上重复生长，但控制 Mo 前体的数量提供了尺寸和层的调整。

2022年2月28日 · Here, we synthesize few-layer MoS 2 films with uniform thickness and adequate coverage over 50 mm 2 size area using ultra-low molybdenum trioxide (MoO 3) precursor placed directly under a face-down silicon dioxide/silicon (SiO 2 /Si) substrate in one-step heating CVD.

化学气相沉积（CVD）被广泛用于合成单层和几层过渡金属二硫化二硫化钼（MoS 2），这是一种二维（2D）材料，在纳米电子学，催化和光电子学中具有各种应用。

2021年5月24日 · By contrast, chemical vapor deposition (CVD) is a dominant method for synthesizing vdW heterostructures with large size, high-quality, and uniformity. Here, we demonstrate the MoO 3 –MoS 2 vertical heterostructures synthesized by one-step CVD process.

2020年3月15日 · We study the use of atomic layer deposited MoO 3 films acting as Mo precursor, in a subsequent step to grow uniform MoS 2 structures with excellent layer and size control over the entire substrate by chemical vapor deposition (CVD)/sulfurization process.