2013年12月1日 · This review aims to highlight the different classes of co-reactant used for metal ALD/pulsed-CVD, and to discuss the reaction pathways known or proposed to be involved.

2014年6月1日 · Atomic layer deposition (ALD) is a vapor phase technique capable of producing thin films of a variety of materials. Based on sequential, self-limiting reactions, ALD offers exceptional conformality on high-aspect ratio structures, thickness control at the Angstrom level, and tunable film composition.

RACT: In this work, we report a new and promising approach towards the atomic layer deposition (ALD) of metallic Co thin films. Utilizing the simple and known CoCl2(TMEDA) (TMEDA = N,N,N’,N’-tetramethylethylenediamine) precursor in combina-tion with the intramolecularly stabilized Zn aminoalkyl compound Zn(DMP)2 (DMP = dimethylam.

Copper metal deposition processes are an essential tool for depositing interconnects used in microelectronic applications, giving group 11 (coinage metals: Copper, Silver, and Gold) an important place in atomic layer deposition (ALD) process development.

studies to the identification of promising new ALD/pulsed-CVD reactivities, and the generation of initial mechanistic hypotheses as to the fundamental reaction steps involved in metal ALD/pulsed-CVD. A primary goal of this review is to provide a unique reactivity-based perspective of metal ALD/pulsed-CVD.

This review surveys the different classes of co-reactant used for thermal metal ALD/pulsed-CVD with a focus on the reaction chemistries known or proposed to be involved. Parallels are drawn between surface-based metal ALD/pulsed-CVD reactivity and solution-based reactivity including electroless deposition, solution-based nanoparticle synthesis ...

2019年10月31日 · While atomic layer deposition (ALD) has become a well-established fabrication method for thin oxide films on such geometries, attempts to develop ALD processes for elemental metal films have met with only mixed success.

2013年12月1日 · This review aims to highlight the different classes of co-reactant used for metal ALD/pulsed-CVD, and to discuss the reaction pathways known or proposed to be involved.

Atomic layer deposition (ALD) is a special type of CVD process which makes it possible to control the atomic scale deposition, and as a result helps in creating smooth alternating layers of varied materials that are extremely thick, uniform and have minimum defects. To this end, both ALD and CVD processes offer practical options since they ...

• When selecting a precursor for ALD/CVD use, consider carrying out a more prolonged “thermal stress test” as well as the routine shorter term thermal analysis. • When using Nickelocene, if practical run at lower temperatures (ie. < 70 C) to avoid too much decomposition.