Description: N-Channel 6 50V (D-S) Power MOSFET. Manufacturer: VBsemi Electronics Co.,Ltd.

K3569-VB由VBsemi(微碧半导体)设计生产，立创商城现货销售，正品保证，参考价格￥3.5，封装为TO-220F-3。 商城还提供K3569-VB专业中文资料、详细参数、引脚图、PCB焊盘图，典型应用图，Datasheet数据手册等资料查询和免费下载。

2023年6月26日 · K3569 is 600V, 10A, N-Channel MOS Field Effect Transistor (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current. 1. Low drain-source ON resistance: RDS (ON)= 0.54Ω (typ.) 2.

Part #: K3569. Description: N-Channel 6 50V (D-S) Power MOSFET. File Size: 2218.7 Kbytes. Manufacturer: VBsemi Electronics Co.,Ltd.

2023年3月27日 · K3569 is an N Channel MOSFET available in TO-220F package. The transistor is having many good features such as low RDS(ON), enhancement mode, low leakage current etc.

K3569 Transistor Datasheet, K3569 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog

2023年2月27日 · K3569 transistor is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor. It is high voltage and current ratings, which make it suitable for use in high-power applications such as motor control, power supplies, and lighting systems. It also has a low on-state resistance, which results in low power dissipation and improved efficiency.

K3569-VB是一款TO220F封装Single-N-Channel沟道场效应晶体管。 产品采用Plannar Technology，Vds为650V；Vgs为30（±V）；而Ida是12A。K3569-VBMOSFET可广泛应用于各种需要Single-N-Channel沟道TO220F封装MOSFET的电子设备和系统。

立创商城提供 vbsemi(微碧半导体) 的 场效应管(mosfet) k3569-vb 的pdf数据手册和参考资料，查看 k3569-vb 数据手册和购买 k3569-vb 上立创商城。

k3569 是一种 600v、10a 的场效应管，具有较高的电压和电流承受能力。 它的主要参数包括源极漏极电压、栅极电压、漏极电流等，这些参数决定了场效应管的工作性能。