The X-ray diffraction (XRD) pattern confirmed the polycrystalline nature of the CuONPs. The prepared CuONPs in powder form were blended with ZnO powder and utilized as an anode material for TVA...

2020年7月27日 · Indium tin oxide (ITO) is one of the most widely used transparent conductors in optoelectronic device applications. We investigated the optical properties of ITO...

2016年3月1日 · The structural parameters of spray coated ITO films were analyzed by X-ray diffractometer (XRD) using the PANalytical system with Cu Kα 1 radiation (k = 1.54056 Å). Surface morphology and topography were carried out by the scanning electron microscope (ESEMQUANTA200, FEI-Netherlands) and atomic force microscopy (Agilent 5500) respectively.

Indium tin oxide (ITO) thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the...

powders by solid-state reaction method, ITO was prepared. Using electron beam gun technology, ITO films with different thicknesses were prepared. The influence of film thickness on structure, electrical and optical properties was studied. The XRD patterns were utilized to …

Discover the impact of thickness on Indium Tin Oxide (ITO) thin films. XRD and XRR analysis reveal crystalline structure and increased domain size. Explore the relationship between roughness and reflectivity curve slope. Find out why XRR is ideal for ultra-thin films.

2022年2月10日 · X-ray diffraction (XRD) patterns were performed on a Shimadzu XRD-7000 diffractometer with a Cu Kα source operating at 40 kV and 30 mA. Scanning electron microscope (SEM) images were recorded on a Zeiss Merlin Compact SEM with a beam energy of 10 kV and In-Lens detector.

2015年10月7日 · Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0 ...

Characterization of the deposited hydrogenated amorphous ITO thin films are made using X-ray diffraction (XRD), atomic force microscopy (AFM), four probe electrical conductivity,...

摘 要:采用直流磁控溅射法制备氧化铟锡 (ITO)薄膜,用 XRD,TEM 和分形理论测试和分析了不同退火时 间 ITO 薄膜的微结构.XRD 分析表明:退火时间持续增加,薄膜的晶格常数先减小后略有增大,这是薄膜中 Sn4+取代 Sn2+导致晶格常数减小和压应力不断释放导致晶格常数增大共同作用的结果.分形研究表明:分形维 数随退火时间的延长先减小后增大,说明薄膜中平均晶粒尺寸先减小后增大,与 XRD 的研究结果一致. 关键词:无机非金属材料;微结构;分形;氧化铟锡 (ITO)薄膜 中图分类 …