60V Single N-Channel Power MOSFET in a TO-220 package. Unfortunately, your browser does not support embedded frames (iframes): You can view the embedded page here.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO …

IRFZ44E – N-Channel 60 V 48A (Tc) 110W (Tc) Through Hole TO-220AB from Infineon Technologies. Pricing and Availability on millions of electronic components from Digi-Key …

View IRFZ44E by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low …

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRFZ44E datasheet (Power MOSFET) from International Rectifier. Available at $1.22/unit. Get specifications, features, and application details in PDF.

当天下单，当天发货。来自 Infineon Technologies 的 IRFZ44E – 通孔 N 通道 60 V 48A（Tc） 110W（Tc） TO-220AB。Digi-Key Electronics 提供数以百万计电子元器件的定价和供应信息。