Sliding ferroelectricity in van der Waals layered γ-InSe ... - Nature
2023年1月3日 · Both X-ray diffraction (XRD) patterns of InSe and InSe:Y (Fig. 1c) show obvious {00l} reflections without peak shifts between them, indicating that Y-doping has not changed …
Structural investigation of InSe layered semiconductors
2020年5月1日 · In this work, we have performed a detailed investigation of the crystal structure and morphology of bulk InSe, by means of X-ray diffraction (XRD), transmission electron …
Wafer-scale growth of two-dimensional, phase-pure InSe
2023年10月4日 · We achieve polymorph-selective epitaxial growth of InSe on c-plane sapphire via flow modulation to control the Se/In ratio. The layer-by-layer growth allows thickness …
Crystal structure and optical performance in bulk γ-InSe single ...
2019年2月12日 · High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and …
Epitaxial growth of γ -InSe and α, β, and γ -In Se on ε -GaSe
2018年6月1日 · We demonstrate that γ -InSe and the α, β and γ phases of In 2 Se 3 can be grown epitaxially on ε -GaSe substrates using a physical vapour transport method. By …
Super deformability and thermoelectricity of bulk γ-InSe single ...
2021年7月1日 · Through comprehensive analysis of XRD, TEM, and Raman spectroscopy, the structure of InSe bulk crystals was systematically studied. The as-grown InSe ingot …
The advancement of compelling Indium Selenide: synthesis, structural ...
2020年11月25日 · SEM image suggested that InSe crystal has layered-type surface without morphological defects. Also, the hexagonal structure of crystal has been confirmed by X-ray …
Indium selenide: an insight into electronic band structure and surface ...
2017年6月13日 · We have investigated the electronic response of single crystals of indium selenide by means of angle-resolved photoemission spectroscopy, electron energy loss …
Exceptional plasticity in the bulk single-crystalline van der Waals ...
2020年7月31日 · In this work, we discovered that indium selenide (InSe), a 2D vdW group IIIA metal chalcogenide, exhibits exceptional plasticity in the bulk single-crystalline form but not in …
Stable InSe transistors with high-field effect mobility for reliable ...
2019年7月30日 · Here, we show a highly stable InSe FET with a field-effect mobility of 1200 cm 2 /V·s in the practical working regime. The bottom-gate staggered InSe FET was fabricated with …